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型号 功能描述 生产厂家 企业 LOGO 操作
4N60D

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100 avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

EVVOSEMI

翊欧

4N60D

场效应晶体管

LUGUANG

鲁光电子

4N60D

N-CHANNEL POWER MOSFET

文件:2.76231 Mbytes Page:9 Pages

SUNMATE

森美特

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

4N60D产品属性

  • 类型

    描述

  • V(BR)DS_min(V):

    600

  • ID_max(A):

    4

  • Rds_max(Ω):

    2.5

  • @VGS(V):

    10

  • VTH(GS):

    4

  • PACKAGE:

    TO-252

更新时间:2026-5-24 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
士兰微
21+
TO-252
880000
明嘉莱只做原装正品现货
士兰微
2406+
TO-252
71260
诚信经营!进口原装!量大价优!
士兰微
21+
TO-252
425300
士兰微
23+
TO-252
425300
原厂授权代理,海外优势订货渠道。可提供大量库存,详
23+
TO252
6500
专注配单,只做原装进口现货

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