Silicon N-Channel Dual Gate MOS FET

Features · Low noise figure. NF = 1.0 dB typ. at f = 200 MHz · Capable of low voltage operation · Provide mini mold packages; MPAK-4R(SOT-143 var.) Application UHF / VHF RF amplifier

Silicon N-Channel Dual Gate MOS FET

· Low noise figure.\n   NF = 1.0 dB typ. at f = 200 MHz\n· Capable of low voltage operation\n· Provide mini mold packages; MPAK-4R(SOT-143 var.)Application\nUHF / VHF RF amplifier\n ;

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

• Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz)\n• High gain characteristics; PG = 24 dB typ. (at f = 900 MHz)\n• Capable low voltage operation; +B = 3.5 V\n• High Endurance Voltage; VDS = 6 V;

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)

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Silicon N-Channel Dual Gate MOS FET

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Silicon N-Channel Dual Gate MOS FET