TRANSISTOR

3SK121 datasheet pdf

TRANSISTOR

3SK121 datasheet pdf

TRANSISTOR

3SK121 datasheet pdf

TRANSISTOR

3SK121 datasheet pdf

TRANSISTOR

3SK121 datasheet pdf

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 3SK122 is designed for use in RF Amplifier and MIXER for VHF TV Tuner.

N CHANNEL DUAL GATE MOS TYPE (TY TUNER, VHF RF AMPLIFIER, TV TUNER VHF MIXER APPLICATIONS)

TV TUNER, VHF RF AMPLIFIER APPLICATIONS TV TUNER VHF MIXER APPLICATIONS Superior Cross Modulation Performance Low Reverse Transfer Capacitance : Crss = 0.03pF(Typ.) Low Noise Figure : NF = 1.4dB(Typ.)

N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER, UHF MIXER APPLICATIONS)

TV TUNER, UHF RF AMPLIFIER APPLICATIONS TV TUNER, UHF MIXER APPLICATIONS

MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : Em

MOS FIELD EFFECT TRANSISTOR

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting

MOS FIELD EFFECT TRANSISTOR

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP.

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP.

RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP.

TRANSISTOR

3SK121 datasheet pdf

GAAS N-CHANNEL DUAL-GATE MES FET

N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER, VHF RF AMPLIFIER APPLICATIONS)

TV TUNER VHF MIXER APPLICATIONS VHF RF AMPLIFIER APPLICATIONS High Conversion Fain: GCS = 24.5dB(Typ.) Low Noise Figure : NFCS = 3.3dB(Typ.)

N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF, VHF WIDE BAND RF AMPLIFIER APPLICATIONS)

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AMPLIFIER APPLICATIONS TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS

GaAs N-channel Dual Gate MES FET

Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga

GaAs N-channel Dual Gate MES FET

Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga

GaAs N-channel Dual Gate MES FET

Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga

GaAs N-channel Dual Gate MES FET

Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga

GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

GaAs N-channel Dual Gate MES FET

Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation •

RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

FEATURES • High Power Gain: GPS = 24 dB TYP. (f = 470 MHz) • Low Noise Figure: NF = 2.0 dB TYP. (f = 470 MHz) NF = 1.0 dB TYP. (f = 55 MHz) • Automatically Mounting: Embossed Type Taping • Suitable for use as RF amplifier and Mixer in CATV tuner. • Small Packa

RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD

FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High GPS : 20 dB TYP. • Low NF : 1.1 dB TYP.

RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD

FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High GPS : 20 dB TYP. • Low NF : 1.1 dB TYP.

High-Frequency General-Purpose Amp Applications

Applications FM tuners and VHF tuners Features Enhancement type Easy AGC (Cut off at VG2S=0V) HIgh power gain and low noise figure High forward transfer admittance

Silicon N-Channel Dual Gate MOS FET

Application UHF TV tuner RF amplifier

Silicon N-Channel Dual Gate MOS FET

Application VHF/UHF TV tuner RF amplifier

N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER ,FM TUNER APPLICATIONS)

TV Tuner, VHF RF Amplifier Applications FM Tuner Applications • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 0.015 pF (typ.) • Low noise figure: NF = 1.1dB (typ.)

N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AMPLIFIER APPLICATIONS

SIRIUS safety relay Basic unit Advanced series with time delay 0.5-30 s Relay enabling circuits 2 NO instantaneous 2 NO delayed Us = 24 V DC screw terminal

文件：326.51 Kbytes Page：5 Pages

N-channel MOS FET

MOS FET

MOS FIELD EFFECT TRANSISTOR RF AMP. FOR UHF TV TUNER

Silicon N-Channel 4-pin MOS FET

文件：192.54 Kbytes Page：3 Pages

High-Frequency General-Purpose Amp Applications???

文件：123.54 Kbytes Page：4 Pages

UHF Amp,Mixer Applications

文件：105.15 Kbytes Page：4 Pages

TV Tuner, VHF RF Amplifier Applications

文件：709.74 Kbytes Page：6 Pages

TV Tuner, VHF RF Amplifier Applications

文件：709.74 Kbytes Page：6 Pages