位置：首页 > IC中文资料第5808页 > 3SK165
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3SK165 | GaAs N-channel Dual Gate MES FET Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga | SONYSony Corporation 索尼 |   | |
3SK165 | GaAs N-channel Dual Gate MES FET | SONYSony Corporation 索尼 | | |
GaAs N-channel Dual Gate MES FET Description\nThe 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. • Low voltage operation\n• Low noise: NF = 1.2dB (typ.) at 800MHz\n• High gain: Ga = 20dB (typ) at 800MHz\n• High stabilityApplication\nUHF band amplifier, mixer and oscillator; | SONYSony Corporation 索尼 | | ||
GaAs N-channel Dual Gate MES FET Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga | SONYSony Corporation 索尼 | | ||
GaAs N-channel Dual Gate MES FET Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga | SONYSony Corporation 索尼 | | ||
GaAs N-channel Dual Gate MES FET Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga | SONYSony Corporation 索尼 | | ||
GaAs N-channel Dual Gate MES FET | SONYSony Corporation 索尼 | |
3SK165产品属性
- 类型
描述
- 型号
3SK165
- 制造商
SONY
- 制造商全称
Sony Corporation
- 功能描述
GaAs N-channel Dual Gate MES FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SONY |
24+ |
SOT143 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SONY |
24+ |
SOT143 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SANYO/三洋 |
25+ |
SOT143 |
20300 |
SANYO/三洋原装特价3SK165即刻询购立享优惠#长期有货 |
|||
SONY |
19+ |
SOT143 |
20000 |
39000 |
|||
SOT-143 |
25+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
SONY/索尼 |
22+ |
SOT143 |
20000 |
只做原装 |
|||
25+23+ |
Sot-143 |
32830 |
绝对原装正品全新进口深圳现货 |
||||
SANYO/三洋 |
2025+ |
SOT143 |
5000 |
原装进口价格优 请找坤融电子! |
|||
TOSHIBA |
24+ |
60000 |
|||||
索尼 |
25+ |
SOT-23 |
6600 |
本公司 只做全新原装正品 |
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3SK165规格书下载地址
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