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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
3SK165 | GaAsN-channelDualGateMESFET Description The3SK165AisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingcellular,cordlessphone. Features •Lowvoltageoperation •Lownoise:NF=1.2dB(typ.)at800MHz •Highgain:Ga | SonySONY 索尼 |  |   |
GaAsN-channelDualGateMESFET Description The3SK165AisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingcellular,cordlessphone. Features •Lowvoltageoperation •Lownoise:NF=1.2dB(typ.)at800MHz •Highgain:Ga | SonySONY 索尼 | | | |
GaAsN-channelDualGateMESFET Description The3SK165AisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingcellular,cordlessphone. Features •Lowvoltageoperation •Lownoise:NF=1.2dB(typ.)at800MHz •Highgain:Ga | SonySONY 索尼 | | | |
GaAsN-channelDualGateMESFET Description The3SK165AisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingcellular,cordlessphone. Features •Lowvoltageoperation •Lownoise:NF=1.2dB(typ.)at800MHz •Highgain:Ga | SonySONY 索尼 | | |
3SK165产品属性
- 类型
描述
- 型号
3SK165
- 制造商
SONY
- 制造商全称
Sony Corporation
- 功能描述
GaAs N-channel Dual Gate MES FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SONY |
23+ |
SOT143 |
20000 |
原厂原装正品现货 |
|||
SONY/索尼 |
2022 |
SOT-143 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
SONY |
23+ |
SOT143 |
12000 |
全新原装优势 |
|||
SONY/索尼 |
24+ |
SOT143 |
860000 |
明嘉莱只做原装正品现货 |
|||
SONY |
1742+ |
SOT-143 |
98215 |
只要网上有绝对有货!只做原装正品! |
|||
SOT-143 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
SANYO |
2023+ |
SOT-143 |
50000 |
原装现货 |
|||
SONY |
22+23+ |
SOT143 |
77380 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
原装SONY |
2023+ |
SOT-143 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
TOSHIBA |
08PB |
60000 |
3SK165芯片相关品牌
3SK165规格书下载地址
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3SK165数据表相关新闻
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