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3N80-FC

Planar Power MOSFET  (N-CH)

UTC

友顺

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFETS

文件:281.01 Kbytes Page:5 Pages

SAMSUNG

三星

ADVANCED POWER MOSFET

文件:321.97 Kbytes Page:6 Pages

SAMSUNG

三星

3N80-FC产品属性

  • 类型

    描述

  • VGS(±V):

    ±30

  • ID(A):

    3

  • RDS(ON)MAX.(mΩ)atVGS=10V:

    5200

  • CISSTYP.(pF):

    390

  • COSSTYP.(pF):

    48

  • CRSSTYP.(pF):

    2.5

  • QgTYP.(nC):

    7.9

  • QgsTYP.(nC):

    3.4

  • QgdTYP.(nC):

    1

  • VGS(th)(V)MIN.:

    3

  • VGS(th)(V)MAX.:

    5

  • TrrTYP.(nS):

    390

  • QrrTYP.(nC):

    5000

  • Package:

    TO-220F_TO-220F1_TO-220F2_TO-251_TO-252

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