3 Amps, 800Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

3 Amps, 800Volts N-CHANNEL POWER MOSFET

The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON)=3.2Ω @VGS=10 V \n• Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF )\n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

3 Amps, 800Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

Power MOSFET

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

3 Amps, 800Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

N-CHANNEL POWER MOSFETS

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ADVANCED POWER MOSFET

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