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3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

UTC

友顺

3.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit

UTC

友顺

3.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit

UTC

友顺

3.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

N-Channel 650 V (D-S) MOSFET

文件:1.08671 Mbytes Page:9 Pages

VBSEMI

微碧半导体

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

Power MOSFET

文件:1.98464 Mbytes Page:9 Pages

VBSEMI

微碧半导体

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

N-Channel 650 V (D-S) Power MOSFET

文件:1.07745 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

Power MOSFET

文件:1.07625 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

TMOS POWER FET 3.0 AMPERES 600 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

MOTOROLA

摩托罗拉

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■

STMICROELECTRONICS

意法半导体

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N60E is supp

PHILIPS

飞利浦

TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS

文件:183.86 Kbytes Page:8 Pages

MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

文件:73.73 Kbytes Page:8 Pages

PHILIPS

飞利浦

3N60L产品属性

  • 类型

    描述

  • 型号

    3N60L

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

更新时间:2026-7-29 17:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
仙童
24+
TO-220
5200
只做原装正品现货 欢迎来电查询15919825718
台产
13+
TO-251
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AAT
25+
TO220F
500000
行业低价,代理渠道
ST
24+
TO-220
30
MOT
2023+
CAN4
50000
原装现货
FAIRCHI
18+
TO-220
85600
保证进口原装可开17%增值税发票
AO/万代
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
UTC/友顺
20+
TO-220F
7500
现货很近!原厂很远!只做原装
WG
26+
TO251
53870
原装正品 原盘原标 提供BOM一站式配单
DG
26+
TO-252
8635
全新原装正品,优势价格

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