型号 功能描述 生产厂家 企业 LOGO 操作
MTB3N60E

TMOS POWER FET 3.0 AMPERES 600 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

Motorola

摩托罗拉

MTB3N60E

High Energy Power FET

文件:146.91 Kbytes Page:4 Pages

ONSEMI

安森美半导体

MTB3N60E

TMOS E-FET high energy power FET D2PAK for surface mount

ETC

知名厂家

MTB3N60E

High Energy Power FET

ONSEMI

安森美半导体

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

N-Channel Power MOSFET

文件:442.29 Kbytes Page:9 Pages

NELLSEMI

尼尔半导体

Fast Switching

文件:49.9 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件:1.08665 Mbytes Page:9 Pages

VBSEMI

微碧半导体

MTB3N60E产品属性

  • 类型

    描述

  • 型号

    MTB3N60E

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    ON Semiconductor

更新时间:2025-11-20 18:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ONSEMI/安森美
24+
TO-263
8540
只做原装正品现货或订货假一赔十!
ON
23+
TO-263
800
正规渠道,只有原装!
SST
原厂封装
9800
原装进口公司现货假一赔百
ON/安森美
23+
TO-263
15021
原厂授权一级代理,专业海外优势订货,价格优势、品种
MOTOROLA
24+
35200
一级代理/放心采购
MOTOROLA
22+
TO-263
3000
原装正品,支持实单
onsemi(安森美)
24+
-
7793
支持大陆交货,美金交易。原装现货库存。
ON
24+
30000
ON/安森美
24+
NA/
4050
原装现货,当天可交货,原型号开票
ON
24+
TO-263
90000
一级代理商进口原装现货、假一罚十价格合理

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