isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.4Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistors Avalanche energy rated

PowerMOS transistors Avalanche energy rated

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3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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Fast Switching

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N-Channel 650 V (D-S) MOSFET

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N-Channel Power MOSFET

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