3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：251.86 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：251.86 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

文件：251.86 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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TMOS POWER FET 3.0 AMPERES 600 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N60E is supp

TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS

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PowerMOS transistors Avalanche energy rated

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