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丝印代码:35N30;N-Channel Enhancement Mode Power MOSFET

General Features VDS =30V,ID =35A RDS(ON)

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丝印代码:35N30;N-Channel Enhancement Mode Power MOSFET

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HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

MegaMOSTMFET

N-Channel Enhancement Mode Features • International standard packages • Low RDS(on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

IXYS

艾赛斯

更新时间:2026-7-29 22:30:01
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