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型号 功能描述 生产厂家 企业 LOGO 操作
RM35N30DN

丝印代码:35N30;N-Channel Enhancement Mode Power MOSFET

General Features VDS =30V,ID =35A RDS(ON)

RECTRON

丽正

RM35N30DN

MOSFET

RECTRON

丽正

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

MegaMOSTMFET

N-Channel Enhancement Mode Features • International standard packages • Low RDS(on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

IXYS

艾赛斯

RM35N30DN产品属性

  • 类型

    描述

更新时间:2026-7-30 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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一级代理-主营优势-实惠价格-不悔选择

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