GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz

General Description The HMC313 & HMC313E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifi ers that operate from a single Vcc supply. The surface mount SOT26 amplifi er can be used as a broadband gain stage or used with external matching for optimized narrow band application

GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz

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GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz

NorthAmericanProductGuide

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NorthAmericanProductGuide

文件：2.18206 Mbytes Page：70 Pages

NorthAmericanProductGuide

文件：2.18206 Mbytes Page：70 Pages

NorthAmericanProductGuide

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HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

Reference Diode

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Reference Diode

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