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型号 功能描述 生产厂家 企业 LOGO 操作
30P55K

功率MOS系列

FM

丝印代码:NCE30P55K;NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-55A RDS(ON)

NCEPOWER

新洁能

丝印代码:NCE30P55L;NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P55L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-55A RDS(ON)

NCEPOWER

新洁能

P-Channel Enhancement Mode Power MOSFET

文件:553.72 Kbytes Page:7 Pages

HMSEMI

华之美半导体

P-Channel Enhancement Mode Power MOSFET

文件:530.35 Kbytes Page:7 Pages

HMSEMI

华之美半导体

丝印代码:30P55;P-Channel Enhancement Mode Power MOSFET

文件:419.93 Kbytes Page:8 Pages

RECTRON

丽正

更新时间:2026-7-29 17:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
富满电子
21+
TO-252-2L
50
只做原装鄙视假货15118075546
26+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
FM/富满
25+
TO-252-2
60000
原装正品可提供技术支持

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