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30N60P

Planar MOSFET

JINGHENG

晶恒

High Speed IGBT

High Speed IGBT Short Circuit SOA Capability Features ● International standard packages ● Short Circuit SOA capability ● High frequency IGBT ● New generation HDMOSTM process Applications ● AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power supplies

IXYS

艾赛斯

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications re

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

MOTOROLA

摩托罗拉

Short Circuit Rated IGBT

文件:565.84 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

Short Circuit Rated IGBT

文件:653.69 Kbytes Page:8 Pages

FAIRCHILD

仙童半导体

30N60P产品属性

  • 类型

    描述

  • Id(A):

    30

  • Pd(W):

    300

  • Vgs(MAX)(V):

    ±30

  • RDS(on)(typ)(Ω)@10V:

    0.21

  • Qg(typ)(nc)@10V:

    64

  • Ciss(typ)(pF):

    3487

  • OUTLINE:

    TO-247AB

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