30A, 200V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(ON)

30A, 200V N-CHANNEL POWER MOSFET

The UTC 30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. • RDS(ON)<75mΩ @ VGS=10V,ID=15A \n• Low Gate Charge (Typical 60nC) \n• High Switching Speed;

N-Channel 200 V (D-S) MOSFET

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Power MOSFET 30 Amps, 200 Volts N-Channel EnhancementïMode TO-220

Features • SourceïtoïDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • PbïFree Package is Available Applications • PWM Motor Controls • Power Supplies • Converters

30A, 200V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(ON)

30A, 200V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(ON)

Planar Power MOSFET  (N-CH)

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev

Power MOSFET 30 Amps, 200 Volts

N−Channel Enhancement−Mode TO−220 30 AMPERES 200 VOLTS 68 m @ VGS= 10 V (Typ) Features •Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode •Avalanche Energy Specified •IDSSand RDS(on)Specified at Elevated Temperature •Pb−Free Package is Avail

Power MOSFET 30 Amps, 200 Volts N?묬hannel Enhancement?묺ode D2PAK

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StarMOST Power MOSFET

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