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位置：首页 > IC中文资料第689页 > 2SK39

2SK39价格

参考价格：￥0.3250

型号：2SK3938GOL 品牌：Panasonic 备注：这里有2SK39多少钱，2025年最近7天走势，今日出价，今日竞价，2SK39批发/采购报价，2SK39行情走势销售排行榜，2SK39报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK3900

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low Ciss: Ciss = 3500

NEC

瑞萨

2SK3900

MOS Field Effect Transistor

Features Low On-state resistance RDS(on)1 = 8.0mÙ MAX. (VGS = 10 V, ID = 41A) RDS(on)2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP.

KEXIN

科信电子

2SK3900

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) •

RENESAS

瑞萨

2SK3900-ZP

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) •

RENESAS

瑞萨

2SK3900-ZP

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low Ciss: Ciss = 3500

NEC

瑞萨

2SK3901

MOS Field Effect Transistor

Features ● Low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30A) ● Low C iss: C iss =1950 pF TYP.

KEXIN

科信电子

2SK3901

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 19

NEC

瑞萨

2SK3901

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) •

RENESAS

瑞萨

2SK3901-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) •

RENESAS

瑞萨

2SK3901-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 19

NEC

瑞萨

2SK3902

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 1200 p

NEC

瑞萨

2SK3902

MOS Field Effect Transistor

Features Low On-state resistance RDS(on)1 = 21mÙ MAX. (VGS = 10 V, ID = 15A) RDS(on)2 = 26 mÙ MAX. (VGS = 4.5 V, ID = 15A) Low C iss: C iss =1200 pF TYP.

KEXIN

科信电子

2SK3902

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Lo

RENESAS

瑞萨

2SK3902-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Lo

RENESAS

瑞萨

2SK3902-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 1200 p

NEC

瑞萨

2SK3903

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3904

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3905

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3906

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3907

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3911

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Small gate charge: Qg= 60 nC (typ.) • Low drain-source ON resistance: RDS (ON)= 0.22 Ω(typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS= 500 μA (VDS= 600 V) • Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10

TOSHIBA

东芝

2SK3911

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3918

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 1. Low on-state resistance RDS(on)1= 7.5 mΩMAX. (V

NEC

瑞萨

2SK3918

MOS Field Effect Transistor

Features Low on-state resistance RDS(on)1=7.5mΩ MAX. (VGS=10V,ID=24A) Low Ciss: Ciss = 1300 pF TYP. 5 V drive available

KEXIN

科信电子

2SK3918

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3918-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3918-ZK

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 1. Low on-state resistance RDS(on)1= 7.5 mΩMAX. (V

NEC

瑞萨

2SK3919

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

NEC

瑞萨

2SK3919

MOS Field Effect Transistor

Features Low on-state resistance RDS(on)1=5.6mΩ MAX. (VGS=10V,ID=32A) Low Ciss: Ciss = 2050 pF TYP. 5 V drive available

KEXIN

科信电子

2SK3919

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3919-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3919-ZK

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

NEC

瑞萨

2SK3934

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.23 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.2 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA

东芝

2SK3934

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3935

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3936

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3940

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3943

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 5800 pF TYP.

NEC

瑞萨

2SK3943

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 5800 pF TYP.

RENESAS

瑞萨

2SK3943-ZP

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 5800 pF TYP.

RENESAS

瑞萨

2SK3943-ZP

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 5800 pF TYP.

NEC

瑞萨

2SK3947

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3984

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3984 is N-channel MOS Field Effect Transistor designed for high speed switching applications such as class-D amplifier. FEATURES • Super low on-state resistance RDS(on) = 71 mΩ TYP. (VGS = 10 V, ID = 9 A) RDS(on) = 85 mΩ MAX. (VGS = 10

RENESAS

瑞萨

2SK3984-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3984 is N-channel MOS Field Effect Transistor designed for high speed switching applications such as class-D amplifier. FEATURES • Super low on-state resistance RDS(on) = 71 mΩ TYP. (VGS = 10 V, ID = 9 A) RDS(on) = 85 mΩ MAX. (VGS = 10

RENESAS

瑞萨

2SK3991

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3991

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 13.0

NEC

瑞萨

2SK3991-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 13.0

NEC

瑞萨

2SK3991-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3992

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3992

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 4.8

NEC

瑞萨

2SK3992-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 4.8

NEC

瑞萨

2SK3992-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3993

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low

RENESAS

瑞萨

2SK3993

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 3.8

NEC

瑞萨

2SK3993-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 3.8

NEC

瑞萨

2SK3993-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low

RENESAS

瑞萨

2SK3994

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3900-ZP

SWITCHING N-CHANNEL POWER MOS FET

RENESAS

瑞萨

2SK3900-ZP

isc N-Channel MOSFET Transistor

文件：401.04 Kbytes Page：2 Pages

ISC

无锡固电

2SK3901

SWITCHING N-CHANNEL POWER MOS FET

RENESAS

瑞萨

2SK39产品属性

  • 类型

    描述

  • 型号

    2SK39

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Cut Tape

2SK39供应商更多...

更新时间：2025-12-25 8:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市金芯世纪电子有限公司
2SK3991-ZK-E2-AY
NEC
22+
SOT-252
100000
代理渠道/只做原装/可含税
询价
深圳深宇韬电子科技有限公司
2SK3991-ZK-E1
NEC
2023+
TO252
8800
正品渠道现货 终端可提供BOM表配单。
询价
深圳市得捷芯城科技有限公司
2SK3991-ZK
RENESAS/瑞萨
24+
NA/
18500
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市高捷芯城科技有限公司
2SK3991-ZK-E1-AZ
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
中天科工半导体（深圳）有限公司
2SK3991-ZK
RENESAS
20+
TO-252
63258
原装优势主营型号-可开原型号增税票
询价
深圳市赛美科科技有限公司
2SK3991-ZK
RENESAS/瑞萨
新年份
TO-252
33288
原装正品现货,实单带TP来谈!
询价
深圳市富利微电子科技有限公司
2SK3991-ZK-E1-AZ
RENESAS/瑞萨
24+
TO-252
33500
全新进口原装现货,假一罚十
询价
深圳市中联芯电子有限公司
2SK3991-ZK-E1-AZHUF76429D3ST
国产/源丝印
24+
TO-252
7800
全新原厂原装正品现货,低价出售,实单可谈
询价
深圳市一线半导体有限公司
2SK3991-ZK
NEC
24+
TO-252
8866
询价
上海磐岳电子有限公司
2SK3991-ZK-E1
NEC
2023+
SOT252
58000
进口原装,现货热卖
询价

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2SK39规格书下载地址

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    2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.

    2021-2-10

  • 2SK508G-K51-AE3-R

    属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW

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  • 2SK3313

    2SK3313，全新原装当天发货或门市自取0755-82732291.

    2020-3-28

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    2SK3591-01R，全新原装当天发货或门市自取0755-82732291.

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