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位置：首页 > IC中文资料第689页 > 2SK39

2SK39价格

参考价格：￥0.3250

型号：2SK3938GOL 品牌：Panasonic 备注：这里有2SK39多少钱，2024年最近7天走势，今日出价，今日竞价，2SK39批发/采购报价，2SK39行情走势销售排行榜，2SK39报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SK3900

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3900isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=8.0mΩMAX.(VGS=10V,ID=41A) RDS(on)2=10mΩMAX.(VGS=4.5V,ID=41A) •LowCiss:Ciss=3500

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3900

MOSFieldEffectTransistor

Features LowOn-stateresistance RDS(on)1=8.0mÙMAX.(VGS=10V,ID=41A) RDS(on)2=10mÙMAX.(VGS=4.5V,ID=41A) LowCiss:Ciss=3500pFTYP.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SK3900

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3900isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=8.0mΩMAX.(VGS=10V,ID=41A) RDS(on)2=10mΩMAX.(VGS=4.5V,ID=41A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3900-ZP

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3900isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=8.0mΩMAX.(VGS=10V,ID=41A) RDS(on)2=10mΩMAX.(VGS=4.5V,ID=41A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3900-ZP

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3900isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=8.0mΩMAX.(VGS=10V,ID=41A) RDS(on)2=10mΩMAX.(VGS=4.5V,ID=41A) •LowCiss:Ciss=3500

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3901

MOSFieldEffectTransistor

Features ●LowOn-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=30A) RDS(on)2=16.5mΩMAX.(VGS=4.5V,ID=30A) ●LowCiss:Ciss=1950pFTYP.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SK3901

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3901isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •SuperlowOn-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=30A) RDS(on)2=16.5mΩMAX.(VGS=4.5V,ID=30A) •LowCiss:Ciss=19

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3901

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3901isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •SuperlowOn-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=30A) RDS(on)2=16.5mΩMAX.(VGS=4.5V,ID=30A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3901-ZK

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3901isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •SuperlowOn-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=30A) RDS(on)2=16.5mΩMAX.(VGS=4.5V,ID=30A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3901-ZK

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3901isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •SuperlowOn-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=30A) RDS(on)2=16.5mΩMAX.(VGS=4.5V,ID=30A) •LowCiss:Ciss=19

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3902

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3902isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •SuperlowOn-stateresistance RDS(on)1=21mΩMAX.(VGS=10V,ID=15A) RDS(on)2=26mΩMAX.(VGS=4.5V,ID=15A) •LowCiss:Ciss=1200p

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3902

MOSFieldEffectTransistor

Features LowOn-stateresistance RDS(on)1=21mÙMAX.(VGS=10V,ID=15A) RDS(on)2=26mÙMAX.(VGS=4.5V,ID=15A) LowCiss:Ciss=1200pFTYP.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SK3902

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3902isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •SuperlowOn-stateresistance RDS(on)1=21mΩMAX.(VGS=10V,ID=15A) RDS(on)2=26mΩMAX.(VGS=4.5V,ID=15A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3902-ZK

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3902isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •SuperlowOn-stateresistance RDS(on)1=21mΩMAX.(VGS=10V,ID=15A) RDS(on)2=26mΩMAX.(VGS=4.5V,ID=15A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3902-ZK

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3902isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •SuperlowOn-stateresistance RDS(on)1=21mΩMAX.(VGS=10V,ID=15A) RDS(on)2=26mΩMAX.(VGS=4.5V,ID=15A) •LowCiss:Ciss=1200p

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3903

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3904

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3905

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3906

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3907

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3911

SiliconN-ChannelMOSTypeSwitchingRegulatorApplications

SwitchingRegulatorApplications •Smallgatecharge:Qg=60nC(typ.) •Lowdrain-sourceONresistance:RDS(ON)=0.22Ω(typ.) •Highforwardtransferadmittance:|Yfs|=11S(typ.) •Lowleakagecurrent:IDSS=500μA(VDS=600V) •Enhancementmodel:Vth=2.0to4.0V(VDS=10

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3911

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3918

SWITCHINGN-CHANNELPOWERMOSFET

The2SK3918isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. 1.Lowon-stateresistance RDS(on)1=7.5mΩMAX.(V

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3918

MOSFieldEffectTransistor

Features Lowon-stateresistance RDS(on)1=7.5mΩMAX.(VGS=10V,ID=24A) LowCiss:Ciss=1300pFTYP. 5Vdriveavailable

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SK3918

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3918isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellentswitching characteristics,anddesignedforlowvoltagehighcurrent applicationssuchasDC/DCconverterwithsynchronous rectifier. FEATURES •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3918-ZK

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3918isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellentswitching characteristics,anddesignedforlowvoltagehighcurrent applicationssuchasDC/DCconverterwithsynchronous rectifier. FEATURES •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3918-ZK

SWITCHINGN-CHANNELPOWERMOSFET

The2SK3918isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. 1.Lowon-stateresistance RDS(on)1=7.5mΩMAX.(V

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3919

SWITCHINGN-CHANNELPOWERMOSFET

The2SK3919isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3919

MOSFieldEffectTransistor

Features Lowon-stateresistance RDS(on)1=5.6mΩMAX.(VGS=10V,ID=32A) LowCiss:Ciss=2050pFTYP. 5Vdriveavailable

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SK3919

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3919isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellentswitching characteristics,anddesignedforlowvoltagehighcurrent applicationssuchasDC/DCconverterwithsynchronous rectifier. FEATURES •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3919-ZK

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3919isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellentswitching characteristics,anddesignedforlowvoltagehighcurrent applicationssuchasDC/DCconverterwithsynchronous rectifier. FEATURES •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3919-ZK

SWITCHINGN-CHANNELPOWERMOSFET

The2SK3919isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3934

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(-MOSVI)

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.23Ω(typ.) •Highforwardtransferadmittance:|Yfs|=8.2S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=500V) •Enhancementmodel:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3934

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3935

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3936

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3940

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3943

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3943isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=10V,ID=41A) •LowCiss:Ciss=5800pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3943

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3943isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=10V,ID=41A) •LowCiss:Ciss=5800pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3943-ZP

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3943isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=10V,ID=41A) •LowCiss:Ciss=5800pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3943-ZP

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3943isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=10V,ID=41A) •LowCiss:Ciss=5800pFTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3947

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3984

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3984isN-channelMOSFieldEffectTransistor designedforhighspeedswitchingapplicationssuchas class-Damplifier. FEATURES •Superlowon-stateresistance RDS(on)=71mΩTYP.(VGS=10V,ID=9A) RDS(on)=85mΩMAX.(VGS=10

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3984-ZK

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3984isN-channelMOSFieldEffectTransistor designedforhighspeedswitchingapplicationssuchas class-Damplifier. FEATURES •Superlowon-stateresistance RDS(on)=71mΩTYP.(VGS=10V,ID=9A) RDS(on)=85mΩMAX.(VGS=10

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3991

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3991isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellentswitching characteristics,anddesignedforlowvoltagehighcurrent applicationssuchasDC/DCconverterwithsynchronous rectifier. FEATURES •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3991

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3991isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES •Lowon-stateresistance RDS(on)1=13.0

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3991-ZK

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3991isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES •Lowon-stateresistance RDS(on)1=13.0

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3991-ZK

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3991isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellentswitching characteristics,anddesignedforlowvoltagehighcurrent applicationssuchasDC/DCconverterwithsynchronous rectifier. FEATURES •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3992

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3992isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellentswitching characteristics,anddesignedforlowvoltagehighcurrent applicationssuchasDC/DCconverterwithsynchronous rectifier. FEATURES •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3992

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3992isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES •Lowon-stateresistance RDS(on)1=4.8

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3992-ZK

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3992isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES •Lowon-stateresistance RDS(on)1=4.8

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3992-ZK

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3992isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellentswitching characteristics,anddesignedforlowvoltagehighcurrent applicationssuchasDC/DCconverterwithsynchronous rectifier. FEATURES •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3993

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3993isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellentswitching characteristics,anddesignedforlowvoltagehighcurrent applicationssuchasDC/DCconverterwithsynchronous rectifier. FEATURES •Low

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3993

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3993isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES •Lowon-stateresistance RDS(on)1=3.8

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3993-ZK

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3993isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES •Lowon-stateresistance RDS(on)1=3.8

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK3993-ZK

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3993isN-channelMOSFETdevicethat featuresalowon-stateresistanceandexcellentswitching characteristics,anddesignedforlowvoltagehighcurrent applicationssuchasDC/DCconverterwithsynchronous rectifier. FEATURES •Low

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3994

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK3900-ZP

iscN-ChannelMOSFETTransistor

文件：401.04 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SK3901(0)-ZK-E1-AY

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK3901_15

SWITCHINGN-CHANNELPOWERMOSFET

文件：284.8 Kbytes Page：10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK39产品属性

  • 类型

    描述

  • 型号

    2SK39

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Cut Tape

2SK39供应商更多...

更新时间：2024-5-21 22:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
2SK3991-ZK
RENESAS
20+
TO-252
63258
原装优势主营型号-可开原型号增税票
询价
深圳硅原半导体有限公司
2SK3991-ZK-E1/JK
NEC
TO252-3
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
询价
深圳市得捷芯城科技有限公司
2SK3991-ZK
RENESAS/瑞萨
23+
NA/
18500
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市威雅利发展有限公司
2SK3991-ZK-E1
NEC
05+
TO252
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市环球伟业电子有限公司
2SK3991-ZK-E1
NEC/Renesas Electronics Americ
21+
TO252
2500
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市卓越微芯电子有限公司
2SK3991-ZK-E1
NEC
2020+
TO252
7500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市赛美科科技有限公司
2SK3991-ZK
RENESAS/瑞萨
新年份
TO-252
33288
原装正品现货,实单带TP来谈!
询价
深圳市航润创能电子集团有限公司
2SK3991-ZK-E1
NEC
21+
TO252
2500
原装现货假一赔十
询价
深圳市富利微电子科技有限公司
2SK3991-ZK-E1-AZ
RENESAS/瑞萨
23+
TO-252
33500
全新进口原装现货,假一罚十
询价
深圳兆威电子有限公司
2SK3991-ZK
VB
2019
TO-252
55000
绝对原装正品假一罚十!
询价

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DdatasheetPDF页码索引

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