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位置：首页 > IC中文资料 > 2SK39

2SK39价格

参考价格：￥0.3250

型号：2SK3938GOL 品牌：Panasonic 备注：这里有2SK39多少钱，2026年最近7天走势，今日出价，今日竞价，2SK39批发/采购报价，2SK39行情走势销售排行榜，2SK39报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK3900

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low Ciss: Ciss = 3500

NEC

瑞萨

2SK3900

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) •

RENESAS

瑞萨

2SK3900

MOS Field Effect Transistor

Features Low On-state resistance RDS(on)1 = 8.0mÙ MAX. (VGS = 10 V, ID = 41A) RDS(on)2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP.

KEXIN

科信电子

2SK3900-ZP

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n• Super low on-state resistance\n  RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A)\n  RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A)\n• Low Ciss: Ciss = 3500 pF TYP.\n• Built-i • Super low on-state resistance\n  RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A)\n  RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A)\n• Low Ciss: Ciss = 3500 pF TYP.\n• Built-in gate protection diode ;

RENESAS

瑞萨

2SK3900-ZP

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) •

RENESAS

瑞萨

2SK3900-ZP

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low Ciss: Ciss = 3500

NEC

瑞萨

2SK3901

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 19

NEC

瑞萨

2SK3901

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) •

RENESAS

瑞萨

2SK3901

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n• Super low On-state resistance\n   RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A)\n   RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)\n• Low Ciss: Ciss = 1950 pF TYP.\n• Buil • Super low On-state resistance\n   RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A)\n   RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)\n• Low Ciss: Ciss = 1950 pF TYP.\n• Built-in gate protection diode ;

RENESAS

瑞萨

2SK3901

MOS Field Effect Transistor

Features ● Low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30A) ● Low C iss: C iss =1950 pF TYP.

KEXIN

科信电子

2SK3901-ZK

Nch Single Power Mosfet 60V 60A 13Mohm Mp-25Zk/To-263

The 2SK3901-ZK is a Nch Single Power Mosfet 60V 60A 13Mohm Mp-25Zk/To-263. • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)\n• Low Ciss: Ciss = 1950 pF TYP.\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SK3901 Data SheetPDF278 ;

RENESAS

瑞萨

2SK3901-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) •

RENESAS

瑞萨

2SK3901-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 19

NEC

瑞萨

2SK3902

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 1200 p

NEC

瑞萨

2SK3902

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Lo

RENESAS

瑞萨

2SK3902

MOS Field Effect Transistor

Features Low On-state resistance RDS(on)1 = 21mÙ MAX. (VGS = 10 V, ID = 15A) RDS(on)2 = 26 mÙ MAX. (VGS = 4.5 V, ID = 15A) Low C iss: C iss =1200 pF TYP.

KEXIN

科信电子

2SK3902-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Lo

RENESAS

瑞萨

2SK3902-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 1200 p

NEC

瑞萨

2SK3903

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3904

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3905

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3906

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3907

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3911

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3911

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Small gate charge: Qg= 60 nC (typ.) • Low drain-source ON resistance: RDS (ON)= 0.22 Ω(typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS= 500 μA (VDS= 600 V) • Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10

TOSHIBA

东芝

2SK3918

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 1. Low on-state resistance RDS(on)1= 7.5 mΩMAX. (V

NEC

瑞萨

2SK3918

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3918

MOS Field Effect Transistor

Features Low on-state resistance RDS(on)1=7.5mΩ MAX. (VGS=10V,ID=24A) Low Ciss: Ciss = 1300 pF TYP. 5 V drive available

KEXIN

科信电子

2SK3918-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3918-ZK

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 1. Low on-state resistance RDS(on)1= 7.5 mΩMAX. (V

NEC

瑞萨

2SK3919

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

NEC

瑞萨

2SK3919

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3919

MOS Field Effect Transistor

Features Low on-state resistance RDS(on)1=5.6mΩ MAX. (VGS=10V,ID=32A) Low Ciss: Ciss = 2050 pF TYP. 5 V drive available

KEXIN

科信电子

2SK3919-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3919-ZK

SWITCHING N-CHANNEL POWER MOSFET

The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

NEC

瑞萨

2SK3934

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.23 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.2 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA

东芝

2SK3934

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3935

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3936

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3940

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3943

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 5800 pF TYP.

NEC

瑞萨

2SK3943

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 5800 pF TYP.

RENESAS

瑞萨

2SK3943-ZP

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 5800 pF TYP.

RENESAS

瑞萨

2SK3943-ZP

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 5800 pF TYP.

NEC

瑞萨

2SK3947

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3984

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3984 is N-channel MOS Field Effect Transistor designed for high speed switching applications such as class-D amplifier. FEATURES • Super low on-state resistance RDS(on) = 71 mΩ TYP. (VGS = 10 V, ID = 9 A) RDS(on) = 85 mΩ MAX. (VGS = 10

RENESAS

瑞萨

2SK3984-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3984 is N-channel MOS Field Effect Transistor designed for high speed switching applications such as class-D amplifier. FEATURES • Super low on-state resistance RDS(on) = 71 mΩ TYP. (VGS = 10 V, ID = 9 A) RDS(on) = 85 mΩ MAX. (VGS = 10

RENESAS

瑞萨

2SK3991

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3991

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 13.0

NEC

瑞萨

2SK3991-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 13.0

NEC

瑞萨

2SK3991-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3992

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3992

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 4.8

NEC

瑞萨

2SK3992-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 4.8

NEC

瑞萨

2SK3992-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

2SK3993

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low

RENESAS

瑞萨

2SK3993

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 3.8

NEC

瑞萨

2SK3993-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 3.8

NEC

瑞萨

2SK3993-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low

RENESAS

瑞萨

2SK3994

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK39产品属性

  • 类型

    描述

  • RDS (ON) (mohm) max. @10V or 8V：

    21

  • Package Type：

    MP-25ZK/TO-263

  • Ciss (pF) typ.：

    1200

  • Nch/Pch：

    Nch

  • Vgs (off) (V) max.：

    2.5

  • Number of Channels：

    Single

  • VGSS (V)：

    20

  • Automotive：

    YES

  • Pch (W)：

    45

  • VDSS (V) max.：

    60

  • Application：

    Low Voltage General Switching

  • ID (A)：

    30

  • Mounting Type：

    Surface Mount

  • RDS (ON) (mohm) max. @4V or 4.5V：

    26

  • QG (nC) typ.：

    25

2SK39供应商更多...

更新时间：2026-7-23 18:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
2SK3991-ZK
RENESAS
20+
TO-252
63258
原装优势主营型号-可开原型号增税票
询价
深圳市富利微电子科技有限公司
2SK3991-ZK-E1-AZ
RENESAS/瑞萨
26+
TO-252
33500
全新进口原装现货,假一罚十
询价
深圳市创新迹电子有限公司
2SK3991-ZK-E1
NEC
22+
TO252
20000
公司只有原装 品质保证
询价
深圳市赛美科科技有限公司
2SK3991-ZK
RENESAS/瑞萨
新年份
TO-252
33288
原装正品现货,实单带TP来谈!
询价
深圳市一线半导体有限公司
2SK3991-ZK
NEC
24+
TO-252
8866
询价
深圳博中泰实业有限公司
2SK3991-ZK-E1-AZHUF76429D3ST
国产/源丝印
25+
15000
本公司 只做全新原装正品
询价
深圳市芯为科技有限公司
2SK3991-ZK-E2
NEC
26+
TO-252
50000
芯为深仓现货
询价
上海金庆电子技术有限公司
2SK3991-ZK
RENESA
21+
TO-252
14406
全新 发货1-2天
询价
洪芯国际半导体（深圳）有限公司
2SK3991-ZK
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
询价
贸泽芯城（深圳）电子科技有限公司
2SK3991-ZK-E1/JK
NEC
23+
TO252-3
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价

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