SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3919 is N-channel MOS FET device that

features a low on-state resistance and excellent switching

characteristics, and designed for low voltage high current

applications such as DC/DC converter with synchronous

rectifier.

FEATURES

• Low on-state resistance

RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A)

• Low Ciss: Ciss = 2050 pF TYP.

• 5 V drive available