SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5450 pF

MOS Field Effect Transistor

Features Low On-state resistance RDS(on)1 = 8.7mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) Low C iss: C iss = 5450 pF TYP.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

N-Channel 60 V (D-S) MOSFET

文件：1.38223 Mbytes Page：7 Pages