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位置：首页 > IC中文资料第662页 > 2SK379

2SK379价格

参考价格：￥0.5530

型号：2SK3796-3-TL-E 品牌：ON 备注：这里有2SK379多少钱，2026年最近7天走势，今日出价，今日竞价，2SK379批发/采购报价，2SK379行情走势销售排行榜，2SK379报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK3793

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A) • Low Ciss: Ciss = 900 pF TYP. • B

NEC

瑞萨

2SK3793

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A) •

RENESAS

瑞萨

2SK3793

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

2SK3793-AZ

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 Rg Tested APPLICATIONS • Isolated DC/DC Converters

VBSEMI

微碧半导体

2SK3794

MOS Field Effect Transistor

Features ● Low On-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) ● Low C iss: C iss = 760 pF TYP. ● Built-in gate protection diode

KEXIN

科信电子

2SK3794

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

RENESAS

瑞萨

2SK3794

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss: Ciss = 760 pF TYP. • Built-i

NEC

瑞萨

2SK3794-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss: Ciss = 760 pF TYP. • Built-i

NEC

瑞萨

2SK3794-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

RENESAS

瑞萨

2SK3796

N-Channel JFET

Features • Small IGSS • Small Ciss Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications

ONSEMI

安森美半导体

2SK3796

N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Features • Small IGSS • Small Ciss Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications

SANYO

三洋

2SK3796-2-TL-E

N-Channel JFET

Features • Small IGSS • Small Ciss Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications

ONSEMI

安森美半导体

2SK3796-3-TL-E

N-Channel JFET

Features • Small IGSS • Small Ciss Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications

ONSEMI

安森美半导体

2SK3797

丝印代码：K3797；Silicon N-Channel MOS Type

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA

东芝

2SK3797

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.43Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

2SK3797

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3797

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 13 A \nPower Dissipation PD 50 W \nDrain-Source voltage VDSS 600 V ;

TOSHIBA

东芝

2SK3798

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3798

Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 2.5Ω(typ.) • High forward transfer admittance: |Yfs | = 2.8 S (typ.) • Low leakage current: IDSS= 100 μA (VDS= 720 V) •Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

TOSHIBA

东芝

2SK3799

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA

东芝

2SK3799

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3793

N-Channel 100-V (D-S) MOSFET

文件：2.1923 Mbytes Page：8 Pages

VBSEMI

微碧半导体

2SK3793_15

SWITCHING N-CHANNEL POWER MOS FET

文件：306.84 Kbytes Page：10 Pages

RENESAS

瑞萨

2SK3794

SWITCHING N-CHANNEL POWER MOSFET

RENESAS

瑞萨

2SK3796

N-Channel JFET, 30V, 0.6 to 6.0mA, 6.5mS, SMCP

ONSEMI

安森美半导体

2SK3796_12

Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

文件：482.66 Kbytes Page：6 Pages

SANYO

三洋

2SK3796-2-TL-E

Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

文件：482.66 Kbytes Page：6 Pages

SANYO

三洋

2SK3796-3-TL-E

Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

文件：482.66 Kbytes Page：6 Pages

SANYO

三洋

2SK3796-3-TL-E

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：JFET N-CH 10MA 100MW SMCP 分立半导体产品 晶体管 - JFET

ONSEMI

安森美半导体

2SK3796-4-TL-E

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：JFET N-CH 10MA 100MW SMCP 分立半导体产品 晶体管 - JFET

ONSEMI

安森美半导体

2SK3796-4-TL-E

Low-Frequency General-Purpose Amplifier, Impedance Converter Applications

文件：482.66 Kbytes Page：6 Pages

SANYO

三洋

2SK3797

丝印代码：K3797；Silicon N-Channel MOS Type Switching Regulator Applications

文件：209.86 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3797

丝印代码：K3797；Switching Regulator Applications

文件：191.06 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3797_06

Silicon N-Channel MOS Type Switching Regulator Applications

文件：209.86 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3797_09

Switching Regulator Applications

文件：191.06 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3798

Switching Regulator Applications

文件：200.66 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3798

Silicon N Channel MOS Type Switching Regulator Applications

文件：217.14 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3798_06

Silicon N Channel MOS Type Switching Regulator Applications

文件：217.14 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3798_09

Switching Regulator Applications

文件：200.66 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3799

Switching Regulator Applications

文件：197.19 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3799

isc N-Channel MOSFET Transistor

文件：332.19 Kbytes Page：2 Pages

ISC

无锡固电

2SK3799

Silicon N-Channel MOS Type Switching Regulator Applications

文件：212.15 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3799_06

Silicon N-Channel MOS Type Switching Regulator Applications

文件：212.15 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3799_10

Switching Regulator Applications

文件：197.19 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK379产品属性

  • 类型

    描述

  • 型号

    2SK379

  • 功能描述

    MOSFET N-CH 100V MP-45F/TO-220

  • RoHS

    是

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

2SK379供应商更多...

更新时间：2026-5-24 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
2SK0198GGB
PANASONIC
2016+
SOT23
6000
全新原装现货,量大价优,公司可售样!
询价
深圳市一线半导体有限公司
2SK3794-Z
NEC
24+
TO-252
8866
询价
深圳市创新迹电子有限公司
2SK0065-P1
PANASONIC/松下
22+
TO-92S
20000
公司只有原装 品质保证
询价
艾睿（深圳）半导体有限公司
2SK0601
PANASONIC/松下
2447
SOT89
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市威雅利发展有限公司
2SK01980QL
PANASONIC/松下
06+
SOT23
2270
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市诺美思科技有限公司
2SK01980QL
PANASONIC
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市豪迈兴电子有限公司
2SK3794-Z
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市河锋鑫科技有限公司
2SK3794-Z
NEC
22+
TO-252
6000
十年配单,只做原装
询价
深圳深宇韬电子科技有限公司
2SK01980QL
PANASONIC/松下
2023+
SOT23
8800
正品渠道现货 终端可提供BOM表配单。
询价
深圳市安富世纪电子有限公司
2SK0065-P1
PANASONIC/松下
23+
TO-92S
10000
全新原装正品现货,支持订货
询价

2SK379芯片相关品牌

2SK379规格书下载地址

2SK379参数引脚图相关

2SK379数据表相关新闻

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