SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A) • Low Ciss: Ciss = 900 pF TYP. • B

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A) •

Nch Single Power Mosfet 100V 12A 125Mohm Mp-45F/To-220

N-Channel 100-V (D-S) MOSFET

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N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 Rg Tested APPLICATIONS • Isolated DC/DC Converters

SWITCHING N-CHANNEL POWER MOS FET

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