Silicon N-Channel Junction FET

Silicon N-Channel Junction FET For low-frequency amplification For switching ■ Features ● Low noise-figure (NF) ● High gate to drain voltage VGDO ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. FEATURES • Gate voltage rating: ±30 V • Low on-state resistanc

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. FEATURES • Gate volta

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

MOS Field Effect Transistor

Features Gate voltage rating: ±30V Low on-state resistance RDS(on)= 160 mÙ MAX. (VGS=10V,ID=10A) Low gate charge QG=47nCTYP.(VDD= 200 V, VGS=10V,ID=20A) Surface mount package available

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. FEATURES • Gate volta

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. FEATURES • Gate voltage rating: ±30 V • Low on-state resistanc

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement model: Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.8 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

N-Channel Power MOSFET

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Micaless package facilitating mounting • Avalanche resistance guarantee

High-Voltage, High-Speed Switching Applications

High-Voltage, High-Speed Switching Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Micaless package facilitating mounting • Avalanche resistance guarantee

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel Power MOSFET

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Micaless package facilitating mounting • Avalanche resistance guarantee

N-Channel Power MOSFET

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Avalanche resistance guarantee

High-Voltage, High-Speed Switching Applications

High-Voltage, High-Speed Switching Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Avalanche resistance guarantee.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel Power MOSFET

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Avalanche resistance guarantee

High-Voltage, High-Speed Switching Applications

High-Voltage, High-Speed Switching Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

High-Voltage, High-Speed Switching Applications

High-Voltage, High-Speed Switching Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee

N-Channel Power MOSFET

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Attachment workability is good by Mica-less package • Avalanche resistance guarantee

N-Channel Power MOSFET

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Attachment workability is good by Mica-less package • Avalanche resistance guarantee

N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING

DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. FEATURES • Gate can

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 20

SWITCHING N-CHANNEL POWER MOS FET

Power MOSFET (N-ch 700V VDSS)

isc N-Channel MOSFET Transistor

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Switching Regulator Applications

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Switching Regulator Applications

文件：200.74 Kbytes Page：6 Pages

Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications

文件：241.64 Kbytes Page：6 Pages

Switching Regulator Applications

文件：241.64 Kbytes Page：6 Pages

High-Voltage, High-Speed Switching Applications

文件：90.53 Kbytes Page：7 Pages

High-Voltage, High-Speed Switching Applications

文件：90.53 Kbytes Page：7 Pages

High-Voltage, High-Speed Switching Applications

文件：497.04 Kbytes Page：7 Pages

High-Voltage, High-Speed Switching Applications

文件：497.04 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：239.99 Kbytes Page：7 Pages

High-Voltage, High-Speed Switching Applications

文件：107.17 Kbytes Page：7 Pages

High-Voltage, High-Speed Switching Applications

文件：107.17 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：239.99 Kbytes Page：7 Pages

High-Voltage, High-Speed Switching Applications

文件：58.07 Kbytes Page：4 Pages

High-Voltage, High-Speed Switching Applications

文件：58.07 Kbytes Page：4 Pages

High-Voltage, High-Speed Switching Applications

文件：107.18 Kbytes Page：7 Pages

High-Voltage, High-Speed Switching Applications

文件：107.18 Kbytes Page：7 Pages

N-Channel 60-V (D-S) MOSFET

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