isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

MOS Field Effect Transistor

Features Gate voltage rating: ±30V Low on-state resistance RDS(on)= 160 mÙ MAX. (VGS=10V,ID=10A) Low gate charge QG=47nCTYP.(VDD= 200 V, VGS=10V,ID=20A) Surface mount package available

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. FEATURES • Gate voltage rating: ±30 V • Low on-state resistanc

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. FEATURES • Gate volta

SWITCHING N-CHANNEL POWER MOSFET

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. FEATURES • Gate volta

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. FEATURES • Gate voltage rating: ±30 V • Low on-state resistanc

SWITCHING N-CHANNEL POWER MOS FET