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型号	功能描述	生产厂家企业	LOGO
2SK364	N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) 文件：218.81 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SK364	Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 文件：655.98 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SK364	Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications	TOSHIBA 东芝	TOSHIBA
2SK3640	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 21 mΩ MAX	NEC 瑞萨	NEC
2SK3640	MOS Field Effect Transistor Features ● Low on-state resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 9 A) ● Low Ciss: Ciss = 570 pF TYP. ● Built-in gate protection diode	KEXIN 科信电子	KEXIN
2SK3640	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • L	RENESAS 瑞萨	RENESAS
2SK3640-ZK	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • L	RENESAS 瑞萨	RENESAS
2SK3640-ZK	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 21 mΩ MAX	NEC 瑞萨	NEC
2SK3641	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3641 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 14 m	NEC 瑞萨	NEC
2SK3641	MOS Field Effect Transistor Features ● Low on-state resistance RDS(on)1 =14 mΩ MAX. (VGS = 10 V, ID = 18A) RDS(on)2 =25 mΩ MAX. (VGS = 4.5 V, ID = 15 A) ● Low Ciss: Ciss = 930 pF TYP.	KEXIN 科信电子	KEXIN
2SK3641	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3641 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • L	RENESAS 瑞萨	RENESAS
2SK3641-ZK	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3641 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • L	RENESAS 瑞萨	RENESAS
2SK3641-ZK	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3641 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 14 m	NEC 瑞萨	NEC
2SK3642	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3642 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.5	NEC 瑞萨	NEC
2SK3642	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3642 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • L	RENESAS 瑞萨	RENESAS
2SK3642-ZK	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3642 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • L	RENESAS 瑞萨	RENESAS
2SK3642-ZK	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3642 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.5	NEC 瑞萨	NEC
2SK3643	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3643 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •	RENESAS 瑞萨	RENESAS
2SK3643	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3643 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6 mΩ	NEC 瑞萨	NEC
2SK3643	MOS Field Effect Transistor Features ● Low on-state resistance RDS(on)1 =6 m MAX. (VGS = 10 V, ID = 32A) RDS(on)2 =9 m MAX. (VGS = 4.5 V, ID = 32 A) ● Low Ciss: Ciss = 2400pF TYP.	KEXIN 科信电子	KEXIN
2SK3643-ZK	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3643 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6 mΩ	NEC 瑞萨	NEC
2SK3643-ZK	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3643 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •	RENESAS 瑞萨	RENESAS
2SK3644-01	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 41A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3645-01MR	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 41A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3646L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 41A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3646S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 41A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3648-01	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3649-01MR	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK364_07	Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 文件：655.98 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SK3641	SWITCHING N-CHANNEL POWER MOSFET	RENESAS 瑞萨	RENESAS
2SK3642	SWITCHING N-CHANNEL POWER MOSFET	RENESAS 瑞萨	RENESAS
2SK3644-01	N-CHANNEL SILICON POWER MOSFET 文件：92.05 Kbytes Page：4 Pages	Fuji 富士通	Fuji
2SK3645-01MR	N-CHANNEL SILICON POWER MOSFET 文件：94.63 Kbytes Page：4 Pages	Fuji 富士通	Fuji
2SK3646-01L	N-CHANNEL SILICON POWER MOSFET 文件：244.77 Kbytes Page：4 Pages	Fuji 富士通	Fuji
2SK3646-01S	N-CHANNEL SILICON POWER MOSFET 文件：244.77 Kbytes Page：4 Pages	Fuji 富士通	Fuji
2SK3646-01SJ	N-CHANNEL SILICON POWER MOSFET 文件：244.77 Kbytes Page：4 Pages	Fuji 富士通	Fuji
2SK3647-01	N-CHANNEL SILICON POWER MOSFET 文件：94.67 Kbytes Page：4 Pages	Fuji 富士通	Fuji
2SK3648-01	N-CHANNEL SILICON POWER MOSFET 文件：106.84 Kbytes Page：4 Pages	Fuji 富士通	Fuji
2SK3649-01MR	N-CHANNEL SILICON POWER MOSFET 文件：106.7 Kbytes Page：4 Pages	Fuji 富士通	Fuji

2SK364产品属性

类型
描述
型号
2SK364
制造商
Fuji Electric

2SK364供应商更多...

更新时间：2025-11-26 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SK364-GR	TOSHIBA/东芝	24+	NA/	6400	原装现货,当天可交货,原型号开票	询价
深圳市凌旭科技有限公司	2SK3646-01L	FUJI	2016+	TO-262	3500	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市金芯世纪电子有限公司	2SK3642-ZK-E2-AY	NEC	22+	SOT-252	100000	代理渠道/只做原装/可含税	询价
深圳市润联芯城科技有限公司	2SK3642-ZK	RENESAS/瑞萨	22+	TO-252	12500	原装正品支持实单	询价
深圳市振宏微科技有限公司	2SK364	SOT-323	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市芯皇电子有限公司	2SK3649-01MR	FUJI/富士电机	23+	N/A	9000	专业配单,原装正品假一罚十,代理渠道价格优	询价
深圳市昌和盛利电子有限公司	2SK3649	FUJI	NEW	TO-220F	9516	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
中天科工半导体（深圳）有限公司	2SK3642	NEC	25+	TO-252/251	45000	NEC全新现货2SK3642即刻询购立享优惠#长期有排单订	询价
深圳市赛美科科技有限公司	2SK364	TOS		TO-92	8553	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市明嘉莱科技有限公司	2SK364-GR	TOSHIBA/东芝	25+	NA	880000	明嘉莱只做原装正品现货	询价

2SK364芯片相关品牌

2SK364规格书下载地址

2SK364参数引脚图相关

2SK364数据表相关新闻

2SMPP-02
优势渠道
2023-2-16
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-10
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

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2SK364产品属性

2SK364供应商更多...

2SK364芯片相关品牌

2SK364规格书下载地址

2SK364参数引脚图相关

2SK364数据表相关新闻

2SMPP-02

2SK3105-T1B-A找代理商上深圳百域芯科技

2SX1-T

2SK508G-K51-AE3-R

2SK3313

2SK3591-01R

DdatasheetPDF页码索引