Small switching (30V, 0.1A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)

SOT-723 Plastic-Encapsulate MOSFETS

N-Channel MOSFET FEATURES • Low on-resistance • Fast switching speed • Low voltage drive makes this device ideal for portable equipment • Drive circuits can be simple • Parallel use is easy APPLICA TIONS • Interfacing , Switching

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching (30V, 100mA) FEATURE * Small surface mounting type. (SOT-723) * Low on-resistance * Fast switching speed * Easily designed drive circuits * Easy to parallel CONSTRUCTION Silicon N-Chan

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching (30V, 100mA) FEATURE * Small surface mounting type. (SC-88/SOT-363) * Low on-resistance * Fast switching speed * Easily designed drive circuits * Easy to parallel CONSTRUCTION Silicon

ESD protected N-Channel Enhancement Mode MOSFET

Description • Low voltage drive(2.5V drive) makes this device ideal for portable equipment. • High speed switching • ESD protected device • Pb-free lead plating & halogen-free package

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.3 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VD

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON)= 0.29 Ω(typ.) • High forward transfer admittance: |Yfs| = 5.8 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDSS= 450 V) • Enhancement mode: Vth= 3.0 to 5.0 V (VDS= 10 V, ID= 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon Jumction FETs Small Signal

Silicon N-Channel MOSFET For switching ■Features •High-speed switching •Wide frequency band

Silicon N-Channel MOSFET

Silicon N-Channel MOSFET For switching ■ Features • High-speed switching • Wide frequency band

Silicon n-channel MOSFET

Silicon n-channel MOSFET For switching ■Features •High-speed switching •Wide frequency band •Gate-protection diode built-in

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

MOS

MOSFET场效应管

N-Channel MOSFET

2.5V Drive Nch MOS FET

文件：87.26 Kbytes Page：4 Pages

N-Channel MOSFET

文件：1.04754 Mbytes Page：5 Pages

2.5V Drive Nch MOS FET

文件：87.26 Kbytes Page：4 Pages

2.5V Drive Nch MOS FET

文件：88.89 Kbytes Page：4 Pages

2.5V Drive Nch MOSFET

文件：88.89 Kbytes Page：4 Pages

Switching Regulator Applications

文件：181.45 Kbytes Page：6 Pages

Switching Regulator Applications

文件：181.45 Kbytes Page：6 Pages

SWITCHING N-CHANNEL POWER MOSFET

文件：338.98 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：331.27 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：375.95 Kbytes Page：2 Pages