您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第1676页 > 2SK351

型号 功能描述 生产厂家 企业 LOGO 操作
2SK351

isc N-Channel MOSFET Transistor

文件：343.26 Kbytes Page：2 Pages

ISC

无锡固电

2SK3510

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate pro

RENESAS

瑞萨

2SK3510

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode

NEC

瑞萨

2SK3510

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on) = 8.5 m MAX. (VGS = 10 V, ID = 42 A) ● Low Ciss: Ciss = 8500 pF TYP. ● Built-in gate protection diode

KEXIN

科信电子

2SK3510-S

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode

NEC

瑞萨

2SK3510-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate pro

RENESAS

瑞萨

2SK3510-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate pro

RENESAS

瑞萨

2SK3510-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode

NEC

瑞萨

2SK3510-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode

NEC

瑞萨

2SK3510-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate pro

RENESAS

瑞萨

2SK3511

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate

RENESAS

瑞萨

2SK3511

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) ● Low Ciss: Ciss = 5900 pF TYP. ● Built-in gate protection diode

KEXIN

科信电子

2SK3511

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode

NEC

瑞萨

2SK3511-S

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode

NEC

瑞萨

2SK3511-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate

RENESAS

瑞萨

2SK3511-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate

RENESAS

瑞萨

2SK3511-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode

NEC

瑞萨

2SK3511-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate protection diode

NEC

瑞萨

2SK3511-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 12.5mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 5900 pF TYP. • Built-in gate

RENESAS

瑞萨

2SK3512

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3512-01L

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3512-S

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3512-SJ

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3513-01L

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3513-01S

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3513-01SJ

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3514

N CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3514-01

N CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3515

N CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3515-01MR

N CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3516-01L

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3516-01S

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3516-01SJ

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3517-01

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3518-01MR

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3519

N CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3519-01

N CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

2SK3510

isc N-Channel MOSFET Transistor

文件：332.79 Kbytes Page：2 Pages

ISC

无锡固电

2SK3510-S

isc N-Channel MOSFET Transistor

文件：326.81 Kbytes Page：2 Pages

ISC

无锡固电

2SK3510-Z

isc N-Channel MOSFET Transistor

文件：400.96 Kbytes Page：2 Pages

ISC

无锡固电

2SK3510-ZJ

isc N-Channel MOSFET Transistor

文件：401.1 Kbytes Page：2 Pages

ISC

无锡固电

2SK3511

isc N-Channel MOSFET Transistor

文件：332.99 Kbytes Page：2 Pages

ISC

无锡固电

2SK3511

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

2SK3511-S

isc N-Channel MOSFET Transistor

文件：327.02 Kbytes Page：2 Pages

ISC

无锡固电

2SK3511-Z

isc N-Channel MOSFET Transistor

文件：401.16 Kbytes Page：2 Pages

ISC

无锡固电

2SK3511-ZJ

isc N-Channel MOSFET Transistor

文件：401.31 Kbytes Page：2 Pages

ISC

无锡固电

2SK3512

N-CHANNEL SILICON POWER MOSFET

Fuji

富士通

2SK3512-01L

功率MOSFET 400V-500V

Fuji

富士通

2SK3512L

isc N-Channel MOSFET Transistor

文件：327.25 Kbytes Page：2 Pages

ISC

无锡固电

2SK3512S

isc N-Channel MOSFET Transistor

文件：401.11 Kbytes Page：2 Pages

ISC

无锡固电

2SK3513L

isc N-Channel MOSFET Transistor

文件：327.4 Kbytes Page：2 Pages

ISC

无锡固电

2SK3513S

isc N-Channel MOSFET Transistor

文件：401.26 Kbytes Page：2 Pages

ISC

无锡固电

2SK3514-01

isc N-Channel MOSFET Transistor

文件：333.67 Kbytes Page：2 Pages

ISC

无锡固电

2SK3514-01

N-CHANNEL SILICON POWER MOSFET

文件：99.96 Kbytes Page：4 Pages

Fuji

富士通

2SK3514-01_03

N-CHANNEL SILICON POWER MOSFET

文件：99.96 Kbytes Page：4 Pages

Fuji

富士通

2SK3515-01MR

isc N-Channel MOSFET Transistor

文件：323.89 Kbytes Page：2 Pages

ISC

无锡固电

2SK3515-01MR

N-CHANNEL SILICON POWER MOSFET

文件：102.75 Kbytes Page：4 Pages

Fuji

富士通

2SK3515-01MR_03

N-CHANNEL SILICON POWER MOSFET

文件：102.75 Kbytes Page：4 Pages

Fuji

富士通

2SK3517-01

isc N-Channel MOSFET Transistor

文件：333.11 Kbytes Page：2 Pages

ISC

无锡固电

2SK3518-01MR

isc N-Channel MOSFET Transistor

文件：323.99 Kbytes Page：2 Pages

ISC

无锡固电

2SK351产品属性

  • 类型

    描述

  • 型号

    2SK351

  • 功能描述

    MOSFET N-CH 75V MP-25/TO-220

  • RoHS

    是

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

2SK351供应商更多...

更新时间：2025-12-25 8:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
2SK3515-01MR
FUJI
2016+
TO-220F
6000
公司只做原装,假一罚十,可开17%增值税发票!
询价
深圳市高捷芯城科技有限公司
2SK3511-S19-AY
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市明嘉莱科技有限公司
2SK3512
FUJITSU/富士通
25+
NV
860000
明嘉莱只做原装正品现货
询价
深圳市东来宝电子科技有限公司
2SK3511IC
NEC
24+
TO-220
43200
郑重承诺只做原装进口现货
询价
深圳市得捷芯城科技有限公司
2SK3519
FUJI/富士电机
24+
NA/
3300
原装现货,当天可交货,原型号开票
询价
深圳市豪迈兴电子有限公司
2SK3511-Z
NEC
24+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市星辰微电科技有限公司
2SK3513-01L,S
FUJI/富士电机
23+
N/A
11550
FUJI/富士电机系列在售
询价
深圳市赛美科科技有限公司
2SK3512-01S
FUJI
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市拓亿芯电子有限公司
2SK3515
FUJI/富士电机
25+
TO-220F
9800
全新原装现货,假一赔十
询价
深圳市振宏微科技有限公司
2SK351801MR
FUJIELEC
23+
NA
1606
专做原装正品,假一罚百!
询价

2SK351芯片相关品牌

2SK351规格书下载地址

2SK351参数引脚图相关

2SK351数据表相关新闻

  • 2SMPP-02

    优势渠道

    2023-2-16

  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package

    2021-6-24

  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P

    2021-6-24

  • 2SK508G-K51-AE3-R

    属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW

    2020-11-12

  • 2SK3313

    2SK3313，全新原装当天发货或门市自取0755-82732291.

    2020-3-28

  • 2SK3591-01R

    2SK3591-01R，全新原装当天发货或门市自取0755-82732291.

    2020-3-28

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示