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2SK322价格
参考价格：￥0.9750
型号：2SK3225(1)-Z-E1 品牌：NEC 备注：这里有2SK322多少钱，2026年最近7天走势，今日出价，今日竞价，2SK322批发/采购报价，2SK322行情走势销售排行榜，2SK322报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK322 | 丝印代码：W*；Silicon N-Channel Junction FET Application HF wide band amplifier | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SK322 | Silicon N-Channel Junction FET | HITACHIHitachi Semiconductor 日立日立公司 | | |
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC T | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 790 pF TYP. • Built-i | NEC 瑞萨 | | ||
MOS Field Effect Transistor Features Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) Low Ciss : Ciss = 790 pF TYP. Built-in Gate Protection Diode | KEXIN 科信电子 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 790 pF TYP. • Built-i | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low i | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built- | NEC 瑞萨 | | ||
MOS Field Effect Transistor Features ● Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) ● Low Ciss : Ciss = 2100 pF TYP. ● Built-in Gate Protection Diode | KEXIN 科信电子 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built- | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low i | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08669 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：333.22 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：401.41 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：398.77 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 60 V (D-S) MOSFET 文件：960.1 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：331.21 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET 文件：974.1 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：399.05 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.64113 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：331.51 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.28659 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：107.27 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：323.97 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK322产品属性
- 类型
描述
- 型号
2SK322
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N-Channel Junction FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS/瑞萨 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
RENESAS/瑞萨 |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
|||
RENESAS/瑞萨 |
22+ |
SOT-23 |
20000 |
只做原装 |
|||
RENESAS/瑞萨 |
23+ |
17154 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS/瑞萨 |
25+ |
SOT-23 |
20300 |
RENESAS/瑞萨原装特价2SK322即刻询购立享优惠#长期有货 |
|||
NEC |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
NEC |
23+ |
TO-220F |
20 |
全新原装正品现货,支持订货 |
|||
NEC |
26+ |
TO-220F |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
2SK322规格书下载地址
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2SK322数据表相关新闻
2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-28
DdatasheetPDF页码索引
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