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2SK322价格
参考价格:¥0.9750
型号:2SK3225(1)-Z-E1 品牌:NEC 备注:这里有2SK322多少钱,2025年最近7天走势,今日出价,今日竞价,2SK322批发/采购报价,2SK322行情走势销售排行榜,2SK322报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK322 | Silicon N-Channel Junction FET Application HF wide band amplifier | HitachiHitachi Semiconductor 日立日立公司 | ||
2SK322 | Silicon N-Channel Junction FET | HitachiHitachi Semiconductor 日立日立公司 | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC T | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 | NEC 瑞萨 | |||
MOS Field Effect Transistor Features Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) Low Ciss : Ciss = 790 pF TYP. Built-in Gate Protection Diode | KEXIN 科信电子 | |||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 790 pF TYP. • Built-i | NEC 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 790 pF TYP. • Built-i | NEC 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built- | NEC 瑞萨 | |||
MOS Field Effect Transistor Features ● Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) ● Low Ciss : Ciss = 2100 pF TYP. ● Built-in Gate Protection Diode | KEXIN 科信电子 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low i | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low i | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built- | NEC 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
N-Channel 650 V (D-S) MOSFET 文件:1.08669 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
isc N-Channel MOSFET Transistor 文件:333.22 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:401.41 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:398.77 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Power MOSFETs | RENESAS 瑞萨 | |||
N-Channel 60 V (D-S) MOSFET 文件:960.1 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
N-Channel MOSFET 文件:974.1 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
isc N-Channel MOSFET Transistor 文件:331.21 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:399.05 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Power MOSFETs | RENESAS 瑞萨 | |||
N-Channel 60 V (D-S) MOSFET 文件:1.64113 Mbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
isc N-Channel MOSFET Transistor 文件:331.51 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-Channel MOSFET uses advanced trench technology 文件:1.28659 Mbytes Page:5 Pages | DOINGTER 杜因特 | |||
Silicon N Channel MOS FET High Speed Power Switching 文件:107.27 Kbytes Page:10 Pages | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor 文件:323.97 Kbytes Page:2 Pages | ISC 无锡固电 |
2SK322产品属性
- 类型
描述
- 型号
2SK322
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N-Channel Junction FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NEC |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
HITACHI |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
HITACHI/日立 |
24+ |
TO 220 |
158490 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
24+ |
SOT23 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
RENESAS/瑞萨 |
25+ |
SOT-23 |
20300 |
RENESAS/瑞萨原装特价2SK322即刻询购立享优惠#长期有货 |
|||
NEC |
07+ |
SOT23 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
2450+ |
TO252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
23+ |
TO-251 |
10000 |
专做原装正品,假一罚百! |
|||
NEC |
24+ |
TO252 |
37500 |
原装正品现货,价格有优势! |
2SK322芯片相关品牌
2SK322规格书下载地址
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2SK322数据表相关新闻
2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) 50mA 漏源电压(Vdss) 15V 类型 N 沟道 最大功率耗散(Ta=25°C) 200mW
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2SK3313,全新原装当天发货或门市自取0755-82732291.
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2SK3591-01R,全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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