2SK322价格

参考价格:¥0.9750

型号:2SK3225(1)-Z-E1 品牌:NEC 备注:这里有2SK322多少钱,2025年最近7天走势,今日出价,今日竞价,2SK322批发/采购报价,2SK322行情走势销售排行榜,2SK322报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK322

Silicon N-Channel Junction FET

Application HF wide band amplifier

HitachiHitachi Semiconductor

日立日立公司

2SK322

Silicon N-Channel Junction FET

HitachiHitachi Semiconductor

日立日立公司

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC T

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0

NEC

瑞萨

MOS Field Effect Transistor

Features Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) Low Ciss : Ciss = 790 pF TYP. Built-in Gate Protection Diode

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 790 pF TYP. • Built-i

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 790 pF TYP. • Built-i

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built-

NEC

瑞萨

MOS Field Effect Transistor

Features ● Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) ● Low Ciss : Ciss = 2100 pF TYP. ● Built-in Gate Protection Diode

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low i

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low i

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built-

NEC

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

N-Channel 650 V (D-S) MOSFET

文件:1.08669 Mbytes Page:9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:333.22 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:401.41 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:398.77 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFETs

RENESAS

瑞萨

N-Channel 60 V (D-S) MOSFET

文件:960.1 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel MOSFET

文件:974.1 Kbytes Page:2 Pages

KEXIN

科信电子

isc N-Channel MOSFET Transistor

文件:331.21 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:399.05 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFETs

RENESAS

瑞萨

N-Channel 60 V (D-S) MOSFET

文件:1.64113 Mbytes Page:7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:331.51 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件:1.28659 Mbytes Page:5 Pages

DOINGTER

杜因特

Silicon N Channel MOS FET High Speed Power Switching

文件:107.27 Kbytes Page:10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:323.97 Kbytes Page:2 Pages

ISC

无锡固电

2SK322产品属性

  • 类型

    描述

  • 型号

    2SK322

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    Silicon N-Channel Junction FET

更新时间:2025-11-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
NEC
22+
SOT-252
100000
代理渠道/只做原装/可含税
HITACHI
24+
NA/
6250
原装现货,当天可交货,原型号开票
HITACHI/日立
24+
TO 220
158490
明嘉莱只做原装正品现货
RENESAS
24+
SOT23
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
RENESAS/瑞萨
25+
SOT-23
20300
RENESAS/瑞萨原装特价2SK322即刻询购立享优惠#长期有货
NEC
07+
SOT23
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
2450+
TO252
8850
只做原装正品假一赔十为客户做到零风险!!
NEC
23+
TO-251
10000
专做原装正品,假一罚百!
NEC
24+
TO252
37500
原装正品现货,价格有优势!

2SK322数据表相关新闻

  • 2SK303L-SOT113SR-V4-TG_UTC代理商

    2SK303L-SOT113SR-V4-TG_UTC代理商

    2023-2-27
  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package

    2021-6-24
  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P

    2021-6-24
  • 2SK508G-K51-AE3-R

    属性 参数值 商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) 50mA 漏源电压(Vdss) 15V 类型 N 沟道 最大功率耗散(Ta=25°C) 200mW

    2020-11-12
  • 2SK3313

    2SK3313,全新原装当天发货或门市自取0755-82732291.

    2020-3-28
  • 2SK3591-01R

    2SK3591-01R,全新原装当天发货或门市自取0755-82732291.

    2020-3-28