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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3229-E | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 |   | |
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
isc N-Channel MOSFET Transistor 文件：323.97 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK3229-E产品属性
- 类型
描述
- 型号
2SK3229-E
- 制造商
Renesas
- 功能描述
Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220CFM Magazine
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
RENESAS/瑞萨 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS/瑞萨 |
13+ |
TO-220 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
RENESAS |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS/瑞萨 |
2025+ |
TO220 |
5000 |
原装进口价格优 请找坤融电子! |
|||
24+ |
60000 |
||||||
RENESAS/瑞萨 |
24+ |
TO220 |
21574 |
郑重承诺只做原装进口现货 |
|||
RENESAS |
1922+ |
NA |
9200 |
公司原装现货假一罚十特价欢迎来电咨询 |
2SK3229-E规格书下载地址
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2SK3229-E数据表相关新闻
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2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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