位置：首页 > IC中文资料第5651页 > 2SK317
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel MOS FET UHF Power Amplifier Features • High power output, High gain, High efficiency P1dB = 220 W , PG = 15.3dB , ηD = 61 (at P1dB) typ. (f = 860MHz) • Compact package Suitable for push - pull circuit | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon N Channel MOS FET UHF Power Amplifier Features • High power output, High gain, High efficiency P1dB = 110 W, PG = 16.0 dB, ηD = 60 (at P1dB) typ. (f = 860MHz) • Compact package | HitachiHitachi Semiconductor 日立日立公司 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Switching Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON)= 38 mΩ(typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.) • Low leakage current: IDSS= 100 mA (max) (VDS= 200 V) •Enhancement-mode: Vth= 1.5 to 3.5 V (VDS= 10 V, | TOSHIBA 东芝 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATION • Low Noise Figure • High Gain | TOSHIBA 东芝 | | ||
Silicon N Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications 文件：185.93 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Switching Regulator, DC-DC Converter and Motor Drive Applications 文件：168.08 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Power MOSFET (N-ch 150V VDSS 250V) | TOSHIBA 东芝 | | ||
isc N-Channel MOSFET Transistor 文件：328.43 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications 文件：185.93 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Switching Regulator, DC-DC Converter and Motor Drive Applications 文件：168.08 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
isc N-Channel MOSFET Transistor 文件：324.03 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：108.54 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SK317产品属性
- 类型
描述
- 型号
2SK317
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 8A I(D) | SOT-119VAR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
NA/ |
70 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PANASONIC |
2016+ |
TO-220F |
3000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
TOSH |
05PB |
SOT343 |
3400 |
全新原装进口自己库存优势 |
|||
SOT-343 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
HITACHI/日立 |
24+ |
106 |
现货供应 |
||||
HITACHI/日立 |
24+ |
TO 3P |
158149 |
明嘉莱只做原装正品现货 |
|||
HITACHI |
98+ |
高频管SMD |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PANASONIC/松下 |
22+ |
TO-220F |
12245 |
现货,原厂原装假一罚十! |
|||
reNESAS |
24+ |
60000 |
|||||
PANASONIC/松下 |
24+ |
TO-220F |
39197 |
郑重承诺只做原装进口现货 |
2SK317规格书下载地址
2SK317参数引脚图相关
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- 2SK3205
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- 2SK3203(L).2SK3203(S)
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- 2SK318
- 2SK3179
- 2SK3178
- 2SK3177-E
- 2SK3177
- 2SK3176_09
- 2SK3176_07
- 2SK3176(F)
- 2SK3176
- 2SK3175A
- 2SK3174A
- 2SK3163-E
- 2SK3163(E)
- 2SK3163
- 2SK3162-E
- 2SK3162(E)
- 2SK3162
- 2SK3161STR-E
- 2SK3161STL-E
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- 2SK3161L-E
- 2SK3161
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- 2SK3159(E)
- 2SK3159
- 2SK3158-E
- 2SK3158
- 2SK3157-E
- 2SK3157
- 2SK3156-E
- 2SK3156
- 2SK3155
- 2SK3154
- 2SK3153
- 2SK3152
- 2SK3151
- 2SK3150
- 2SK315
- 2SK3149
- 2SK3148
- 2SK3147
- 2SK3142
2SK317数据表相关新闻
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2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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