位置：首页 > IC中文资料第1189页 > 2SK3113B-S15
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A) | NEC 瑞萨 |   | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESAS 瑞萨 | |
2SK3113B-S15产品属性
- 类型
描述
- 型号
2SK3113B-S15
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
4150 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
Renesas |
1335+ |
TO252-2 |
2300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
24+ |
17+ |
10 |
TO-251 |
|||
NEC CORPORATION |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
25+ |
TO-251 |
30000 |
代理全新原装现货,价格优势 |
|||
NEC |
24+ |
TO-252 |
8866 |
||||
N/A |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC |
23+ |
TO-251 |
6000 |
专注配单,只做原装进口现货 |
|||
NEC |
1922+ |
SOT252 |
3000 |
绝对进口原装现货 |
2SK3113B-S15芯片相关品牌
2SK3113B-S15规格书下载地址
2SK3113B-S15参数引脚图相关
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2SK3113B-S15数据表相关新闻
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-28
DdatasheetPDF页码索引
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