位置：首页 > IC中文资料第8386页 > 2SK3109
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3109 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on)= 0.4 Ω MAX. | NEC 瑞萨 |   | |
2SK3109 | MOS Field Effect Transistor Features Gate voltage rating 30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A) Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available | KEXIN 科信电子 | | |
2SK3109 | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-stat | RENESAS 瑞萨 | | |
2SK3109 | isc N-Channel MOSFET Transistor 文件：332.47 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SK3109 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-stat | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on)= 0.4 Ω MAX. | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on)= 0.4 Ω MAX. | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-stat | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：400.56 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：326.38 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：400.67 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK3109产品属性
- 类型
描述
- 型号
2SK3109
- 制造商
KEXIN
- 制造商全称
Guangdong Kexin Industrial Co.,Ltd
- 功能描述
MOS Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NEC |
22+ |
TO-263 |
6000 |
十年配单,只做原装 |
|||
NEC |
24+ |
TO-220 |
35200 |
一级代理分销/放心采购 |
|||
NEC |
25+ |
220 |
8880 |
原装认准芯泽盛世！ |
|||
SAY |
16+ |
TO-220 |
10000 |
全新原装现货 |
|||
NEC |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
25+ |
TO-220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
NEC |
22+ |
TO-263 |
20000 |
公司只有原装 品质保证 |
|||
NEC |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEC |
23+ |
10000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
2SK3109规格书下载地址
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2SK3109数据表相关新闻
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2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-28
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