SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3109 is N-channel MOS FET device that

features a low on-state resistance and excellent

switching characteristics, and designed for high voltage

applications such as DC/DC converter.

FEATURES

• Gate voltage rating ±30 V

• Low on-state resistance

RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 5.0 A)

• Low input capacitance

Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)

• Avalanche capability rated

• Built-in gate protection diode

• Surface mount device available