SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A) • Low Ciss : Ciss = 2100 pF

Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

Low-Frequency Amp Applications?

Low-Frequency Amplifier Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, and constant-current regulators.

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 6 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source

N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)

FM Tuner, VHF RF Amplifier Applications Low reverse transfer capacitance: Crss= 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: Gps= 28dB (typ.) Recommend operation voltage: 5~15 V

2SK300

Silicon N Channel MOS FET Low Frequency Power Switching

Silicon N Channel MOS FET Low Frequency Power Switching Features • Low on-resistance RDS(on) = 0.16 Ω typ. (VGS= 10 V, ID= 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability

Silicon N Channel MOS FET Low Frequency Power Switching

Features • Low on-resistance RDS(on)= 0. 25Ω typ. (VGS= 10 V, ID= 450 mA) • 4V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability

GaAs HEMT Low Noise Amplifier

Features · Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) · High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz) · Small package. (CMPAK-4)

External dimensions 1

External dimensions 1 ...... FM20

External dimensions

External dimensions 1 ...... FM20 *1: PW 100µs, duty cycle 1 *2: VDD = 25V, L = 650µH, IL = 18A, unclamped, RG = 50Ω, See Figure 1 on Page 5.

External dimensions 1 ...... FM20

External dimensions 1 ...... FM20

External dimensions

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

VX-2 Series Power MOSFET(600V 8A)

N-Channel Enhancement type FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching power supply of AC 100-200V input ● Inverter

SI N CHANNEL JUCTION

2SK247 Si N-Channel Junction 1Page Wide-Band,Low-Noise Amplifier 2SK301 Si N-Channel Junction 3Page AF Amplifier, Switching 2SK316 Si N-Channel Junction 5Page Vide Camera First Stage Amplifier

VX-2 Series Power MOSFET(600V 16A)

FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching power supply of AC 100~200V input ● Inverter ● Power Factor Control Circuit

N CHANNEL MOS TYPE (HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON)= 1.05 Ω(typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 720 V) Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 m

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2.5V Drive Nch MOS FET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Interfacing, switching (30V, 100mA)

SOT-23 Plastic-Encapsu l ate MOSFET

N -Channel MOSFET Features ● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for Portable equipment ● Easily designed drive circuits ● Easy to parallel Applications ● Interfacing , Switching

N-Channel Enhancement Mode Field Effect Transistor

Features • Low ON-Resistance • Low Input Capacitance • Low Voltage drive makes this device idipmenteal for portable equipment • Fast Switching Speed • Easily Designed Drive Circuits • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Applications Interfacing, switching.

N-channel MOSFET

N-channel MOSFET FEATURE ● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for Portable equipment ● Easily designed drive circuits ● Easy to parallel APPLICATION ● Interfacing , Switching

N-Channel Enhancement Mode MOSFET

• Structure Silicon N-channel MOSFET • Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. • Applications Interfacing, switching (3

N-Channel Enhancement-Mode MOS FETs

N-Channel Enhancement-Mode MOSFETs

Low on-resistance, Fast switching spped, Silicon N-channel MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive cirduits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)

Small switching (30V, 0.1A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Interfacing, switching (30V, 100mA)

N-Channel MOSFET

■ Features ● Lowon-resistance. ● Fast switching speed. ● Silicon N-channelMOSFET ● Drive circuitscan be simple.

N-Channel 30-V(D-S) MOSFET

zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) ESD protected 2KV HBM zApplications Interfacing, switching (30V, 100mA)

SOT-323 Plastic-Encapsulate N-channel MOSFETS

FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Easily designed drive circuits Easy to parallel Portable equipment APPLICATION Interfacing , Switching

Plastic-Encapsulate MOSFETS

FEATURES  Low on-resistance  Fast switching speed  Low voltage drive makes this device  Easily designed drive circuits  Easy to parallel ideal for portable equipment

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 0.1 A ● RDS(ON)

SOT-23 Plastic-Encapsulate MOS FETS

FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel

ESD protected N-Channel Enhancement Mode MOSFET

Description • Low voltage drive(2V drive) makes this device ideal for portable equipment. • High speed switching • ESD protected device • Pb-free lead plating & halogen-free package

2.5V Drive Nch MOS FET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Interfacing, switching (30V, 100mA)

2.5V Drive Nch MOSFET

Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low voltage drive(2.5V drive). Application Switching

N-Channel MOSFET in a SOT-323 Plastic Package

Descriptions N-Channel MOSFET in a SOT-323 Plastic Package. Features Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Applications Interfacing, switching.

N-channel MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive cirduits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)

N-channel MOSFET

FEATURES ● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for portable equipment ● Easily designed drive circuits ● Easy to parallel

N-Channel POWER MOSFET

Description: * Low on-resistance. * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel. Features: * Simple Drive Requirement * Small Package Outline

Plastic-Encapsulate MOSFETS

FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel

SOT-323 Plastic-Encapsulate MOSFETS

FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel

N-Channel Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low ON-Resistance • Low voltage drive makes this device ideal for portable equipment • Fast Switching Speed • Easily designed drive circuits • Easy to parallel • Available in Lead

N-Channel MOSFET

■ Features ● Low on-resistance. ● Fast switching speed. ● Low voltage drive (2.5V) makes this device ideal for portable equipment. ● Easily designed drive circuits. ● Easy to parallel.

2.5V Drive Nch MOS FET

Small switching (30V, 0.1A)
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)
Structure S

N-channel MOSFET

SOT-523 Plastic-Encapsulate MOSFETS FEATURE ● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for Portable equipment ● Easily designed drive circuits ● Easy to parallel APPLICATION ● Interfacing, Switching

N -channel MOSFET

N-Channel Field Effect Transistor Features ● Low on-resistance. ● Fast switching speed. ● Low voltage drive (2.5V) makes this device ideal for portable equipment. ● Easily designed drive circuits. ● Easy to parallel. Applications ● Interfacing, switching

Small switching (30V, 0.1A)

Small switching (30V, 0.1A)
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)
Structure S

N-Channel 30-V(D-S) MOSFET

zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) ESD protected 2KV HBM zApplications Interfacing, switching (30V, 100mA)

SOT-523 Plastic-Encapsulate MOSFETS

FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily designed drive circuits Easy to parallel

2.5V Drive Nch MOSFET

Features 1) High-speed switching. 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy.

Plastic-Encapsulate MOSFETS

FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Easily designed drive circuits Easy to parallel Portable equipment APPLICATION Interfacing , Switching

2.5V Drive Nch MOS FET

Small switching (30V, 0.1A)
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)
Structure S

N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)

FM Tuner, VHF RF Amplifier Applications Low reverse transfer capacitance: Crss= 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: Gps= 28dB (typ.) Recommend operation voltage: 5~15 V

Silicon N-Channel Power F-MOS FET

■Features ●Avalanche energy capacity guaranteed ●High-speed switching ●Low ON-resistance ●No secondary breakdown ●Low-voltage drive ●High electrostatic breakdown voltage ■Applications ●Contactless relay ●Diving circuit for a solenoid ●Driving circuit for a motor

Silicon N-Channel Power F-MOSFET

Features Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive High electrostatic breakdown voltage

Silicon N-Channel Power F-MOS FET

■Features ●Avalanche energy capacity guaranteed ●High-speed switching ●Low ON-resistance ●No secondary breakdown ●Low-voltage drive ●High electrostatic breakdown voltage ■Applications ●Contactless relay ●Diving circuit for a solenoid ●Driving circuit for a motor

Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for

Silicon N-Channel Power F-MOSFET

Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 20 A (VGS = 10V) ● RDS(ON)