2SK301价格

参考价格:¥0.0780

型号:2SK3018 品牌:ROHM 备注:这里有2SK301多少钱,2025年最近7天走势,今日出价,今日竞价,2SK301批发/采购报价,2SK301行情走势销售排行榜,2SK301报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SK301

SI N CHANNEL JUCTION

2SK247 Si N-Channel Junction 1Page Wide-Band,Low-Noise Amplifier 2SK301 Si N-Channel Junction 3Page AF Amplifier, Switching 2SK316 Si N-Channel Junction 5Page Vide Camera First Stage Amplifier

Panasonic

松下

VX-2 Series Power MOSFET(600V 16A)

FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching power supply of AC 100~200V input ● Inverter ● Power Factor Control Circuit

SHINDENGEN

N CHANNEL MOS TYPE (HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON)= 1.05 Ω(typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 720 V) Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 m

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

N-Channel Enhancement Mode MOSFET

• Structure Silicon N-channel MOSFET • Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. • Applications Interfacing, switching (3

HTSEMI

金誉半导体

N-Channel Enhancement-Mode MOS FETs

N-Channel Enhancement-Mode MOSFETs

GSMEGuilin Strong Micro-Electronics Co., Ltd.

桂微桂林斯壮桂微电子有限责任公司

2.5V Drive Nch MOS FET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Interfacing, switching (30V, 100mA)

ROHM

罗姆

SOT-23 Plastic-Encapsu l ate MOSFET

N -Channel MOSFET Features ● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for Portable equipment ● Easily designed drive circuits ● Easy to parallel Applications ● Interfacing , Switching

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

N-Channel Enhancement Mode Field Effect Transistor

Features • Low ON-Resistance • Low Input Capacitance • Low Voltage drive makes this device idipmenteal for portable equipment • Fast Switching Speed • Easily Designed Drive Circuits • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

MCC

美微科

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Applications Interfacing, switching.

FOSHAN

蓝箭电子

N-channel MOSFET

N-channel MOSFET FEATURE ● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for Portable equipment ● Easily designed drive circuits ● Easy to parallel APPLICATION ● Interfacing , Switching

JIANGSU

长电科技

Small switching (30V, 0.1A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Interfacing, switching (30V, 100mA)

ROHM

罗姆

N-Channel MOSFET

■ Features ● Lowon-resistance. ● Fast switching speed. ● Silicon N-channelMOSFET ● Drive circuitscan be simple.

KEXIN

科信电子

Low on-resistance, Fast switching spped, Silicon N-channel MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive cirduits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

N-Channel 30-V(D-S) MOSFET

zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) ESD protected 2KV HBM zApplications Interfacing, switching (30V, 100mA)

TUOFENG

拓锋半导体

SOT-323 Plastic-Encapsulate N-channel MOSFETS

FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Easily designed drive circuits Easy to parallel Portable equipment APPLICATION Interfacing , Switching

LUGUANG

鲁光电子

Plastic-Encapsulate MOSFETS

FEATURES  Low on-resistance  Fast switching speed  Low voltage drive makes this device  Easily designed drive circuits  Easy to parallel ideal for portable equipment

GWSEMI

唯圣电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 0.1 A ● RDS(ON)

KEXIN

科信电子

SOT-23 Plastic-Encapsulate MOS FETS

FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

ESD protected N-Channel Enhancement Mode MOSFET

Description • Low voltage drive(2V drive) makes this device ideal for portable equipment. • High speed switching • ESD protected device • Pb-free lead plating & halogen-free package

CYSTEKEC

全宇昕科技

2.5V Drive Nch MOS FET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Interfacing, switching (30V, 100mA)

ROHM

罗姆

2.5V Drive Nch MOSFET

Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low voltage drive(2.5V drive). Application Switching

ROHM

罗姆

N-Channel MOSFET in a SOT-323 Plastic Package

Descriptions N-Channel MOSFET in a SOT-323 Plastic Package. Features Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Applications Interfacing, switching.

FOSHAN

蓝箭电子

N-Channel POWER MOSFET

Description: * Low on-resistance. * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel. Features: * Simple Drive Requirement * Small Package Outline

WEITRON

N-channel MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive cirduits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

N-channel MOSFET

FEATURES ● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for portable equipment ● Easily designed drive circuits ● Easy to parallel

YFWDIODE

佑风微电子

Plastic-Encapsulate MOSFETS

FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel

GWSEMI

唯圣电子

SOT-323 Plastic-Encapsulate MOSFETS

FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

Small switching (30V, 0.1A)

Small switching (30V, 0.1A) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA) Structure S

ROHM

罗姆

N-Channel 30-V(D-S) MOSFET

zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) ESD protected 2KV HBM zApplications Interfacing, switching (30V, 100mA)

TUOFENG

拓锋半导体

N-channel MOSFET

SOT-523 Plastic-Encapsulate MOSFETS FEATURE ● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for Portable equipment ● Easily designed drive circuits ● Easy to parallel APPLICATION ● Interfacing, Switching

JIANGSU

长电科技

N-Channel Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low ON-Resistance • Low voltage drive makes this device ideal for portable equipment • Fast Switching Speed • Easily designed drive circuits • Easy to parallel • Available in Lead

MCC

美微科

N-Channel MOSFET

■ Features ● Low on-resistance. ● Fast switching speed. ● Low voltage drive (2.5V) makes this device ideal for portable equipment. ● Easily designed drive circuits. ● Easy to parallel.

KEXIN

科信电子

2.5V Drive Nch MOS FET

Small switching (30V, 0.1A) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA) Structure S

ROHM

罗姆

N -channel MOSFET

N-Channel Field Effect Transistor Features ● Low on-resistance. ● Fast switching speed. ● Low voltage drive (2.5V) makes this device ideal for portable equipment. ● Easily designed drive circuits. ● Easy to parallel. Applications ● Interfacing, switching

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SOT-523 Plastic-Encapsulate MOSFETS

FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily designed drive circuits Easy to parallel

DGNJDZ

南晶电子

2.5V Drive Nch MOSFET

Features 1) High-speed switching. 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy.

ROHM

罗姆

Plastic-Encapsulate MOSFETS

FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Easily designed drive circuits Easy to parallel Portable equipment APPLICATION Interfacing , Switching

GWSEMI

唯圣电子

2.5V Drive Nch MOS FET

Small switching (30V, 0.1A) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA) Structure S

ROHM

罗姆

isc N-Channel MOSFET Transistor

文件:374.91 Kbytes Page:2 Pages

ISC

无锡固电

VX-2 Series Power MOSFET(600V 12A)

文件:429.93 Kbytes Page:12 Pages

SHINDENGEN

N-Channel Enhancement MOSFET

文件:108.62 Kbytes Page:1 Pages

KEXIN

科信电子

isc N-Channel MOSFET Transistor

文件:318.79 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:318.57 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

文件:724.29 Kbytes Page:6 Pages

TOSHIBA

东芝

DC−DC Converter, Relay Drive and Motor Drive Applications

文件:422.44 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

文件:724.29 Kbytes Page:6 Pages

TOSHIBA

东芝

DC−DC Converter, Relay Drive and Motor Drive Applications

文件:422.44 Kbytes Page:6 Pages

TOSHIBA

东芝

Plastic-Encapsulate MOSFETS

文件:702.86 Kbytes Page:2 Pages

SHENZHENSLS

三联盛

2.5V Drive Nch MOS FET

文件:89.89 Kbytes Page:4 Pages

ROHM

罗姆

2.5V Drive Nch MOS FET

文件:89.89 Kbytes Page:4 Pages

ROHM

罗姆

N-Channel MOSFET

文件:824.81 Kbytes Page:3 Pages

KEXIN

科信电子

SOT-23 Field Effect Transistors

文件:304.57 Kbytes Page:3 Pages

GSMEGuilin Strong Micro-Electronics Co., Ltd.

桂微桂林斯壮桂微电子有限责任公司

N-Channel MOSFET

文件:1.12975 Mbytes Page:3 Pages

KEXIN

科信电子

N-Channel MOSFET

文件:1.15339 Mbytes Page:3 Pages

KEXIN

科信电子

N-Channel 60-V (D-S) MOSFET

文件:1.01249 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Power MOSFET

文件:1.63106 Mbytes Page:3 Pages

LEIDITECH

雷卯电子

N-channel MOSFET

文件:1.20207 Mbytes Page:3 Pages

YFWDIODE

佑风微电子

N-Channel 60-V (D-S) MOSFET

文件:1.01247 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel MOSFET

文件:671.03 Kbytes Page:3 Pages

YFWDIODE

佑风微电子

2SK301产品属性

  • 类型

    描述

  • 型号

    2SK301

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-8-18 15:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHILOP迪浦
2016+
SOT23-3
3159
只做原装,假一罚十,公司可开17%增值税发票!
CJ/长电
25+
SOT-523
157374
明嘉莱只做原装正品现货
SHIKUES/時科
24+
SOT523
33500
全新进口原装现货,假一罚十
ROHM/罗姆
21+
SOT-23
9800
只做原装正品假一赔十!正规渠道订货!
TWGMC臺灣迪嘉
25+
SOT23
36000
TWGMC臺灣迪嘉原装现货2SK3018即刻询购立享优惠#长期有排单订
24+
CAN
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
长电
16+
SOT-323
11800
进口原装现货/价格优势!
TOS
2024
TO-3PF
58209
16余年资质 绝对原盒原盘代理渠道 更多数量
ROHM(罗姆)
2025+
N/A
158494
MOSFET N-CH 30V .1A SOT-323
TOSHIBA
23+
TO-3P
9526

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