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2SK298价格

参考价格：￥0.5200

型号：2SK2980 品牌：HITACHI 备注：这里有2SK298多少钱，2025年最近7天走势，今日出价，今日竞价，2SK298批发/采购报价，2SK298行情走势销售排行榜，2SK298报价。

型号	功能描述	生产厂家企业	LOGO
2SK298	isc N-Channel MOSFET Transistor 文件：321.65 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2980	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK)	RENESAS 瑞萨	RENESAS
2SK2980	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK)	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2980ZZ-TL-E	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK)	RENESAS 瑞萨	RENESAS
2SK2980ZZ-TR-E	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK)	RENESAS 瑞萨	RENESAS
2SK2981	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2981 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID =	RENESAS 瑞萨	RENESAS
2SK2981	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS(on)1= 27 mΩ(MAX.) (VGS= 10 V, ID= 10 A) RDS(on)2= 40 mΩ(MAX.) (VGS= 4.5 V, ID= 10 A) RDS(on)3= 50 mΩ(MAX.) (VGS= 4 V, ID= 10 A) • Low Ciss: C	NEC 瑞萨	NEC
2SK2981-Z	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS(on)1= 27 mΩ(MAX.) (VGS= 10 V, ID= 10 A) RDS(on)2= 40 mΩ(MAX.) (VGS= 4.5 V, ID= 10 A) RDS(on)3= 50 mΩ(MAX.) (VGS= 4 V, ID= 10 A) • Low Ciss: C	NEC 瑞萨	NEC
2SK2981-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2981 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID =	RENESAS 瑞萨	RENESAS
2SK2982	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2982 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 15	RENESAS 瑞萨	RENESAS
2SK2982-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2982 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 15	RENESAS 瑞萨	RENESAS
2SK2983	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2983 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.5 V, ID = 15 A)	RENESAS 瑞萨	RENESAS
2SK2983	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1= 20 mΩ (MAX.) (VGS= 10 V, ID= 15 A) RDS(on)2= 27 mΩ (MAX.) (VGS= 4.5 V, ID= 15 A) • Low Ciss Ciss= 1200 pF TYP. • Bu	NEC 瑞萨	NEC
2SK2983-S	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1= 20 mΩ (MAX.) (VGS= 10 V, ID= 15 A) RDS(on)2= 27 mΩ (MAX.) (VGS= 4.5 V, ID= 15 A) • Low Ciss Ciss= 1200 pF TYP. • Bu	NEC 瑞萨	NEC
2SK2983-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2983 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.5 V, ID = 15 A)	RENESAS 瑞萨	RENESAS
2SK2983-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2983 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.5 V, ID = 15 A)	RENESAS 瑞萨	RENESAS
2SK2983-ZJ	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1= 20 mΩ (MAX.) (VGS= 10 V, ID= 15 A) RDS(on)2= 27 mΩ (MAX.) (VGS= 4.5 V, ID= 15 A) • Low Ciss Ciss= 1200 pF TYP. • Bu	NEC 瑞萨	NEC
2SK2984	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1 = 10 mΩ (MAX.) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 mΩ (MAX.) (VGS = 4.5 V, ID = 20 A) • Low Ciss Ciss = 2850 pF TYP. • Built-in ga	NEC 瑞萨	NEC
2SK2984	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2984 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS(on)1 = 10 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 20 A)	RENESAS 瑞萨	RENESAS
2SK2984-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2984 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS(on)1 = 10 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 20 A)	RENESAS 瑞萨	RENESAS
2SK2984-S	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1 = 10 mΩ (MAX.) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 mΩ (MAX.) (VGS = 4.5 V, ID = 20 A) • Low Ciss Ciss = 2850 pF TYP. • Built-in ga	NEC 瑞萨	NEC
2SK2984-ZJ	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1 = 10 mΩ (MAX.) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 mΩ (MAX.) (VGS = 4.5 V, ID = 20 A) • Low Ciss Ciss = 2850 pF TYP. • Built-in ga	NEC 瑞萨	NEC
2SK2984-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2984 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS(on)1 = 10 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 20 A)	RENESAS 瑞萨	RENESAS
2SK2985	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) DC−DC Converter, Relay Drive and Motor Drive Applications 1. Low drain−source ON resistance : RDS (ON)= 4.5 mΩ(typ.) 2. High forward transfer admittance : \|Yfs\| = 70 S (typ.) 3. Low leakage current : IDSS= 100 µA (max) (VDS= 60 V) 4. Enhancement−mode : Vth= 1.3~2.5 V (VDS= 10 V,	TOSHIBA 东芝	TOSHIBA
2SK2986	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) DC−DC Converter, Relay Drive and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) ● High forward transfer admittance : \|Yfs\| = 80 S (typ.) ● Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) ● Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK2987	N CHANNEL MOS TYPE (HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON)= 4.5 mΩ(typ.) High forward transfer admittance : \|Yfs\| = 80 S (typ.) Low leakage current : IDSS= 100 µA (max) (VDS= 60 V) Enhancement−mode : Vth= 1.3~2.5 V (VDS= 10 V, ID= 1mA)	TOSHIBA 东芝	TOSHIBA
2SK2989	N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER,AND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 120 mΩ (typ.) ● High forward transfer admittance : \|Yfs\| = 2.6 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) ● Enhancement−mode : Vth = 1.0 to 2.2 V (VDS = 10 V, ID	TOSHIBA 东芝	TOSHIBA
2SK2989	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2980ZZ-TL-E	Silicon N-Channel MOS FET High Speed Power Switching	RENESAS 瑞萨	RENESAS
2SK2983	MOS FIELD EFFECT TRANSISTOR / SWITCHINGN-CHANNEL POWER MOS FET INDUSTRIAL USE	RENESAS 瑞萨	RENESAS
2SK2983-ZJ	MOS FIELD EFFECT TRANSISTOR / 2SK2983, 2SK2983-S, 2SK2983-ZJ	RENESAS 瑞萨	RENESAS
2SK2989	Chopper Regulator, DC−DC Converter and Motor Drive Applications 文件：243.49 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
2SK2989(T6CANO,F,M	封装/外壳：TO-226-3，TO-92-3 长体包装：卷带（TR）描述：MOSFET N-CH TO92MOD 分立半导体产品晶体管 - FET，MOSFET - 单个	ETC 知名厂家	ETC
2SK2989(TPE6,F,M)	封装/外壳：TO-226-3，TO-92-3 长体包装：卷带（TR）描述：MOSFET N-CH TO92MOD 分立半导体产品晶体管 - FET，MOSFET - 单个	ETC 知名厂家	ETC
2SK2989_06	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications 文件：257.7 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
2SK2989_09	Chopper Regulator, DC−DC Converter and Motor Drive Applications 文件：243.49 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA

2SK298产品属性

类型
描述
型号
2SK298
制造商
Renesas Electronics Corporation

2SK298供应商更多...

更新时间：2025-12-25 12:05:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海磐岳电子有限公司	2SK2989	TOSHIBA	2023+	TO92	58000	进口原装,现货热卖	询价
上海凌岳电子科技有限公司（上海涵恩科技）	2SK2984		2023+		3000	进口原装现货	询价
深圳市勤思达科技有限公司	2SK2980ZZ-TL	RENESAS/瑞萨	24+	SOT-23	5000	全新原装正品,现货销售	询价
贸泽芯城（深圳）电子科技有限公司	2SK298O	HITACHI/日立	23+	SOT-23	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市高捷芯城科技有限公司	2SK2980ZZ-TL-E	RENESAS(瑞萨)/IDT	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	2SK2986	TOSHIBA/东芝	24+	NA/	14568	原装现货,当天可交货,原型号开票	询价
洪芯国际半导体（深圳）有限公司	2SK2980/ZZ	HITACHI/日立	25+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
中天科工半导体（深圳）有限公司	2SK2980ZZ-TL-E	RENESAS/瑞萨	25+	SOT-23	44710	RENESAS/瑞萨全新特价2SK2980ZZ-TL-E即刻询购立享优惠#长期有货	询价
深圳市美思瑞电子科技有限公司	2SK2983-ZJ-E1	NEC	22+	TO-263	12245	现货,原厂原装假一罚十!	询价
深圳市宇创芯科技有限公司	2SK2980ZZ-TL-E	RENESAS/瑞萨	24+	SOT-23	9600	原装现货,优势供应,支持实单!	询价

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2SK3105-T1B-A找代理商上深圳百域芯科技
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2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
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2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
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2019-11-14

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2SK298价格

2SK298产品属性

2SK298供应商更多...

2SK298芯片相关品牌

2SK298规格书下载地址

2SK298参数引脚图相关

2SK298数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK2698

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