SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2981 is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Low on-state resistance

RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 10 A)

RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 10 A)

RDS(on)3 = 50 mΩ MAX. (VGS = 4 V, ID = 10 A)

• Low Ciss : Ciss = 860 pF TYP.

• Built-in gate protection diode