位置：首页 > IC中文资料第803页 > 2SK293
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.020 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.020 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.020 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.040Ω typ. • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.040Ω typ. • 4V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.040Ω typ. • 4V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.010 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance : RDS=0.026 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance : RDS=0.026 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET, High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET, High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET, High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：332.74 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：333.26 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 60-V (D-S) MOSFET 文件：1.27355 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Nch Single Power Mosfet 60V 10A 0.075Mohm To220Cfm | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：2.13789 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：322.98 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon N Channel MOS FET High Speed Power Switching | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：323.32 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：323.58 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：323.37 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 60-V (D-S) MOSFET 文件：949.86 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：324.05 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.48656 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
isc N-Channel MOSFET Transistor 文件：323.51 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：327.01 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：400.87 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：326.54 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：400.41 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK293产品属性
- 类型
描述
- 型号
2SK293
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-220AB Box
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
4630 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
23+ |
TO263PB |
20000 |
全新原装假一赔十 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RNENSAS |
24+ |
TO263PB |
1000 |
||||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
RNENSAS |
23+ |
TO263PB |
5000 |
专注配单,只做原装进口现货 |
|||
H |
25+ |
TOTO-220AB |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS |
1922+ |
TO-263 |
6598 |
原装进口现货库存专业工厂研究所配单供货 |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
32500 |
原厂代理 终端免费提供样品 |
|||
RENESAS/瑞萨 |
25+ |
TO-263-2 |
858 |
就找我吧!--邀您体验愉快问购元件! |
2SK293芯片相关品牌
2SK293规格书下载地址
2SK293参数引脚图相关
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- 2SK2917LB
- 2SK2917(F)
- 2SK2917
- 2SK2916(F)
- 2SK2916
- 2SK2915(Q,T)
- 2SK2915(Q)
- 2SK2915
- 2SK2914(F)
- 2SK2914
- 2SK2912
- 2SK2911
- 2SK291
- 2SK2909
- 2SK2907
- 2SK2903
- 2SK2902
- 2SK2900
2SK293数据表相关新闻
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
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2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
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2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
2021-6-242SK2698
2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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