2SK2929资料datasheet下载货源供应商报价日立-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第1020页 > 2SK292

2SK292价格

参考价格：￥1.5600

型号：2SK2920 品牌：TOSHIBA 备注：这里有2SK292多少钱，2025年最近7天走势，今日出价，今日竞价，2SK292批发/采购报价，2SK292行情走势销售排行榜，2SK292报价。

型号	功能描述	生产厂家企业	LOGO
2SK2920	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)	TOSHIBA 东芝	TOSHIBA
2SK2920	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2925	Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source	RENESAS 瑞萨	RENESAS
2SK2925	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.060 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2925L	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.060 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2925L	Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source	RENESAS 瑞萨	RENESAS
2SK2925L-E	Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source	RENESAS 瑞萨	RENESAS
2SK2925S	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.060 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2925S	N-Channel Silicon MOSFET Features ● Low on-resistance RDS =0.060 typ. ● High speed switching ● 4V gate drive device can be driven from 5V source	KEXIN 科信电子	KEXIN
2SK2925S	Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source	RENESAS 瑞萨	RENESAS
2SK2926	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042 Ωtyp. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SK2926	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • 4V gate drive devices. • High speed switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2926L	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • 4V gate drive devices. • High speed switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2926L	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042 Ωtyp. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SK2926L-E	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042 Ωtyp. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SK2926S	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • 4V gate drive devices. • High speed switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2926S	N-Channel Silicon MOSFET N-Channel Silicon MOSFET Features Low on-resistance RDS=0.042Ω typ. High speed switching	KEXIN 科信电子	KEXIN
2SK2926S	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042 Ωtyp. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SK2926STL-E	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042 Ωtyp. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SK2927	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2927	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK2927-E	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK2928	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.040Ω typ. • 4V gate drive devices. • High speed switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2928	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.040 Ωtyp. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SK2928-E	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.040 Ωtyp. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SK2929	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.026 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source	RENESAS 瑞萨	RENESAS
2SK2929	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.026 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2929-E	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.026 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source	RENESAS 瑞萨	RENESAS
2SK292ST5L-E	Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source	RENESAS 瑞萨	RENESAS
2SK2920	Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications 文件：716.03 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
2SK2920	Chopper Regulator, DC/DC Converter and Motor Drive 文件：398.54 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
2SK2920_06	Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications 文件：716.03 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
2SK2920_10	Chopper Regulator, DC/DC Converter and Motor Drive 文件：398.54 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
2SK2922	Silicon N Channel MOS FET UHF Power Amplifier 文件：36.34 Kbytes Page：7 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2922	Silicon N Channel MOS FET UHF Power Amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2923	isc N-Channel MOSFET Transistor 文件：323.32 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2923	Silicon N-Channel Power F-MOS FET	Panasonic 松下	Panasonic
2SK2924	Silicon N-Channel Power F-MOS FET	Panasonic 松下	Panasonic
2SK2924	isc N-Channel MOSFET Transistor 文件：323.2 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2925	N-Channel 60 V (D-S) MOSFET 文件：1.00194 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SK2925L	isc N-Channel MOSFET Transistor 文件：398 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2925L	N-Channel 60 V (D-S) MOSFET 文件：960.15 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SK2925S	isc N-Channel MOSFET Transistor 文件：330.14 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2925STL-E	N-Channel 60 V (D-S) MOSFET 文件：1.00198 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SK2926	N-Channel 60-V (D-S) MOSFET 文件：896.88 Kbytes Page：6 Pages	VBSEMI 微碧半导体	VBSEMI
2SK2926L	N-Channel 60 V (D-S) MOSFET 文件：960.13 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SK2926L	isc N-Channel MOSFET Transistor 文件：398.21 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2926S	isc N-Channel MOSFET Transistor 文件：330.35 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2926STL-E	N-Channel 60-V (D-S) MOSFET 文件：896.91 Kbytes Page：6 Pages	VBSEMI 微碧半导体	VBSEMI
2SK2926-ZJ	N-Channel MOSFET 文件：1.50979 Mbytes Page：5 Pages	KEXIN 科信电子	KEXIN
2SK2927	isc N-Channel MOSFET Transistor 文件：305.36 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2927	N-Channel 60 V (D-S) MOSFET 文件：1.60033 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
2SK2928	isc N-Channel MOSFET Transistor 文件：333.1 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2929	isc N-Channel MOSFET Transistor 文件：332.42 Kbytes Page：2 Pages	ISC 无锡固电	ISC

2SK292产品属性

类型
描述
型号
2SK292
制造商
Toshiba America Electronic Components
功能描述
Part Number Only

2SK292供应商更多...

更新时间：2025-12-24 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SK2929	RENESAS/瑞萨	24+	NA/	22800	优势代理渠道,原装正品,可全系列订货开增值税票	询价
中天科工半导体（深圳）有限公司	2SK2929	RENESAS	20+	TO-220	36900	原装优势主营型号-可开原型号增税票	询价
深圳市明嘉莱科技有限公司	2SK2929	HITACHI/日立	24+	TO 220	158291	明嘉莱只做原装正品现货	询价
深圳市拓亿芯电子有限公司	2SK293	TOSHIBA/东芝	25+	USQ	80000	一级代理原装现货。	询价
深圳市诺美思科技有限公司	2SK293(TE85LF)	TOSHIBA		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市振宏微科技有限公司	2SK2930	HIT	23+	TO-220	10000	专做原装正品,假一罚百!	询价
深圳市勤思达科技有限公司	2SK293(TE85LF)	TOSHIBA	24+	SOT323	5000	全新原装正品,现货销售	询价
深圳市一线半导体有限公司	2SK2929	SANYO	24+		30000		询价
深圳市恒创达实业有限公司	2SK2929	Renesas	17+	TO-220	6200		询价
洪芯国际半导体（深圳）有限公司	2SK2929	NEC	25+	WMini8-F1	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价

2SK292芯片相关品牌

2SK292规格书下载地址

2SK292参数引脚图相关

2SK292数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-27
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-24
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
2021-6-24
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
2021-6-24
2SK2698
2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

2SK292价格

2SK292产品属性

2SK292供应商更多...

2SK292芯片相关品牌

2SK292规格书下载地址

2SK292参数引脚图相关

2SK292数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK2698

DdatasheetPDF页码索引