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2SK2925价格
参考价格：￥1.1050
型号：2SK2925STR 品牌：HITACHI 备注：这里有2SK2925多少钱，2025年最近7天走势，今日出价，今日竞价，2SK2925批发/采购报价，2SK2925行情走势销售排行榜，2SK2925报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK2925 | Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.060 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SK2925 | Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | |
2SK2925 | N-Channel 60 V (D-S) MOSFET 文件：1.00194 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
2SK2925 | Silicon N Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | |
Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.060 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.060 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | ||
N-Channel Silicon MOSFET Features ● Low on-resistance RDS =0.060 typ. ● High speed switching ● 4V gate drive device can be driven from 5V source | KEXIN 科信电子 | | ||
N-Channel 60 V (D-S) MOSFET 文件：960.15 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：398 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：330.14 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
60V,10A,80 mΩ,N-Channel Small Signal MOSFET | GALAXYCHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD. 银河微电常州银河世纪微电子股份有限公司 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.00198 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
2SK2925产品属性
- 类型
描述
- 型号
2SK2925
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
108 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HIT |
23+ |
SOT252 |
20000 |
全新原装假一赔十 |
|||
RENESAS/瑞萨 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
11+ |
TO-252 |
1177 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HITACHI |
20+ |
TO-252 |
63258 |
原装优势主营型号-可开原型号增税票 |
|||
HITACHI/日立 |
24+ |
TO 262 263 |
158306 |
明嘉莱只做原装正品现货 |
|||
HIT |
02+ |
SOT252 |
2550 |
全新原装进口自己库存优势 |
|||
HIT/日立 |
23+24 |
SOT252 |
16790 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
|||
RENESAS |
2014+ |
600 |
公司现货库存 |
||||
RENESAS/瑞萨 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
2SK2925规格书下载地址
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2019-11-14
DdatasheetPDF页码索引
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