2SK2925价格
参考价格：￥1.1050
型号：2SK2925STR 品牌：HITACHI 备注：这里有2SK2925多少钱，2026年最近7天走势，今日出价，今日竞价，2SK2925批发/采购报价，2SK2925行情走势销售排行榜，2SK2925报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK2925 | Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.060 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SK2925 | Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | |
2SK2925 | Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.060 Ωtyp.\n\n• High speed switching\n\n• 4V gate drive device can be driven from 5V source | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SK2925 | N-Channel 60 V (D-S) MOSFET 文件：1.00194 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.060 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=0.060 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source | RENESAS 瑞萨 | | ||
N-Channel Silicon MOSFET Features ● Low on-resistance RDS =0.060 typ. ● High speed switching ● 4V gate drive device can be driven from 5V source | KEXIN 科信电子 | | ||
N-Channel 60 V (D-S) MOSFET 文件：960.15 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：398 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：330.14 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
60V,10A,80 mΩ,N-Channel Small Signal MOSFET | GALAXY 银河微电 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.00198 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
2SK2925产品属性
- 类型
描述
- 封装类型：
DPAK(L)-(2)/TO-251
- Nch/Pch：
Nch
- 通道数：
Single
- VDSS (V) 最大值：
60
- ID (A)：
10
- RDS (ON)(mΩ) 最大值@4V或4.5V：
160
- RDS (ON)(mΩ) 最大值@10V或8V：
80
- Ciss (pF) 典型值：
350
- Vgs (off) (V) 最大值：
2.5
- VGSS (V)：
20
- Pch (W)：
20
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIT |
23+ |
SOT252 |
20000 |
全新原装假一赔十 |
|||
HITACHI |
20+ |
TO-252 |
63258 |
原装优势主营型号-可开原型号增税票 |
|||
HIT |
02+ |
SOT252 |
2550 |
全新原装进口自己库存优势 |
|||
RENESAS/瑞萨 |
2450+ |
TO251 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
24+ |
TO252 |
16900 |
原装正品现货支持实单 |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS |
26+ |
TO252 |
360000 |
进口原装现货 |
|||
TO-252 |
25+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESA |
25+ |
TO-251 |
2200 |
现货 |
|||
RENESAS |
25+23+ |
TO252 |
75229 |
绝对原装正品现货,全新深圳原装进口现货 |
2SK2925规格书下载地址
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2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
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2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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