N-Channel Enhancement Mode Power MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-Channel Enhancement Mode Power MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4 V gate drive devices. • Large current capacitance ID = 5 A

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4 V gate drive devices. • Large current capacitance ID = 5 A

N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATIONS)

UHF BAND AMPLIFIER APPLICATION (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in thisdocument

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATION)

UHF BAND AMPLIFIER APPLICATION (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document e

N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

UHF BAND LOW NOISE AMPLIFIER APPLICATIONS ● Low Noise Figure : NF = 0.7dB (f=1.5GHz) ● High Gain : Ga = 21.5dB (f=1.5GHz)

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver. FEATURES • Can be driven by a 5V power so

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as

MOS Field Effect Transistor

■ Features ● VDS (V) = 60V ● ID = 4 A ● RDS(ON)

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features ● Directly driven by a 4.0 V power source. ● Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A)

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features ● Directly driven by a 4.0 V power source. ● Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A)

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features ● Directly driven by a 4.0 V power source. ● Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A)

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 4 A ● RDS(ON)

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.5 V power source. The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEAT

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.5-V power source. The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate cu

N-Channel Enhancement Mode MOSFET

Features © Lowonresistance © ESD protected gate up to 2KV HBM © High-speed switching © Drive circuits can be simple. © Parallel use is easy

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features · Low On resistance. · Ultrahigh-speed switching. · 4V drive.

Silicon N Channel MOS FET High Speed Power Switching

Power MOSFETs

Radio-frequency power MOSFET

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION

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封装/外壳：TO-243AA 包装：托盘 描述：MOSFET RF N CH 10V 500MA 分立半导体产品 晶体管 - FET，MOSFET - 射频

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION

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FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION

文件：153.53 Kbytes Page：4 Pages

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION

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N-Channel MOSFET

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N-Channel Silicon MOSFET

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