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2SK273价格

参考价格：￥0.3250

型号：2SK2731 品牌：ROHM 备注：这里有2SK273多少钱，2026年最近7天走势，今日出价，今日竞价，2SK273批发/采购报价，2SK273行情走势销售排行榜，2SK273报价。

型号	功能描述	生产厂家企业	LOGO
2SK2730	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2730	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2730-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2731	丝印代码：T146；Interface and switching (30V, 200mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET	ROHM 罗姆	ROHM
2SK2731	Silicon N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON)	KEXIN 科信电子	KEXIN
2SK2731	丝印代码：KL；Interface and switching (30V, 200mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET	ROHM 罗姆	ROHM
2SK2731-3	N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON)	KEXIN 科信电子	KEXIN
2SK2731T146	Interface and switching (30V, 200mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET	ROHM 罗姆	ROHM
2SK2733	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2734	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2734	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A	RENESAS 瑞萨	RENESAS
2SK2735	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2735	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK2735L	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2735L	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK2735L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2735L-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK2735S	Silicon N-Channel MOSFET Features ● Low on-resistance ● RDS = 20 mΩ typ. ● High speed switching ● 4V gate drive device can be driven from 5V source	KEXIN 科信电子	KEXIN
2SK2735S	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2735S	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK2735S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2735STL-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK2736	Silicon N Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2736	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SK2736-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SK2737	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SK2737	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2737-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SK2738	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 15 mΩ typ • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK2738	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK2738-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 15 mΩ typ • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK2730	isc N-Channel MOSFET Transistor 文件：303.26 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2731	Interface and switching (30V, 200mA)	ROHM 罗姆	ROHM
2SK2731_15	N-Channel MOSFET 文件：1.04724 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SK2731-HF	N-Channel MOSFET 文件：1.09923 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SK2731-HF-3	N-Channel MOSFET 文件：1.10758 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SK2733	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications 文件：705.67 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
2SK2733	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) 文件：289.33 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SK2733	Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive Applications	TOSHIBA 东芝	TOSHIBA
2SK2733	isc N-Channel MOSFET Transistor 文件：306.26 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2733_06	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications 文件：705.67 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
2SK2733_09	Chopper Regulator, DC−DC Converter and Motor Drive 文件：418.45 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
2SK2734	Power MOSFETs	RENESAS 瑞萨	RENESAS
2SK2735L	isc N-Channel MOSFET Transistor 文件：398.15 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2735L	N-Channel 30-V (D-S) MOSFET 文件：959.93 Kbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SK2735S	N-Channel MOSFET uses advanced trench technology 文件：756.17 Kbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
2SK2735S	isc N-Channel MOSFET Transistor 文件：378.9 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2736	isc N-Channel MOSFET Transistor 文件：296.76 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2737	isc N-Channel MOSFET Transistor 文件：296.95 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2738	isc N-Channel MOSFET Transistor 文件：296.87 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2738	N-Channel 60-V (D-S) MOSFET 文件：949.59 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI

2SK273产品属性

类型
描述
型号
2SK273
制造商
Renesas Electronics Corporation
功能描述
Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box
制造商
Renesas
功能描述
Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box

2SK273供应商更多...

更新时间：2026-3-11 11:44:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华来深电子有限公司	2SK2731T146	ROHM	25+	SMD	20000	专做罗姆，一系列可以订货排单，只做原装正品假一罚十	询价
深圳市宏捷佳电子科技有限公司	2SK2731	ROHM	2023+	SOT-23	50000	原装现货	询价
深圳市宇创芯科技有限公司	2SK2731T146	RHOM	24+	SOT-23	9600	原装现货,优势供应,支持实单!	询价
深圳市纳艾斯科技有限公司	2SK2731	ROHM	24+	SOT23	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
贸泽芯城（深圳）电子科技有限公司	2SK2731KL	ROHM/罗姆	23+	SOT-23	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市亿联芯电子科技有限公司	2SK2731T146	ROHM/罗姆	2023+	SOT-23	2685	一级代理优势现货,全新正品直营店	询价
现代芯城（深圳）科技有限公司	2SK2731T146		24+	N/A	57000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市坤融电子科技有限公司	2SK2731	ROHM/罗姆	2025+	SOT-23	5000	原装进口价格优请找坤融电子!	询价
深圳市科恒伟业电子有限公司	2SK2731T146	ROHM/罗姆	2450+	SOT23-3	8850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市莱克讯科技有限公司	2SK2731	ROHM	1922+	SOT23	3000	绝对进口原装现货	询价

2SK273芯片相关品牌

2SK273规格书下载地址

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2SK303L-SOT113SR-V4-TG_UTC代理商
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2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-24
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
2021-6-24
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
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2SK2698
2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14

DdatasheetPDF页码索引

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找IC，尽在114IC

2SK273价格

2SK273产品属性

2SK273供应商更多...

2SK273芯片相关品牌

2SK273规格书下载地址

2SK273参数引脚图相关

2SK273数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK2698

DdatasheetPDF页码索引