2SK273价格

参考价格:¥0.3250

型号:2SK2731 品牌:ROHM 备注:这里有2SK273多少钱,2025年最近7天走势,今日出价,今日竞价,2SK273批发/采购报价,2SK273行情走势销售排行榜,2SK273报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings

RENESAS

瑞萨

Interface and switching (30V, 200mA)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET

ROHM

罗姆

Interface and switching (30V, 200mA)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET

ROHM

罗姆

Silicon N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON)

KEXIN

科信电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON)

KEXIN

科信电子

Interface and switching (30V, 200mA)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET

ROHM

罗姆

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N-Channel MOSFET

Features ● Low on-resistance ● RDS = 20 mΩ typ. ● High speed switching ● 4V gate drive device can be driven from 5V source

KEXIN

科信电子

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel DV-L MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 15 mΩ typ • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 15 mΩ typ • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:303.26 Kbytes Page:2 Pages

ISC

无锡固电

Interface and switching (30V, 200mA)

ROHM

罗姆

N-Channel MOSFET

文件:1.04724 Mbytes Page:3 Pages

KEXIN

科信电子

N-Channel MOSFET

文件:1.09923 Mbytes Page:3 Pages

KEXIN

科信电子

N-Channel MOSFET

文件:1.10758 Mbytes Page:3 Pages

KEXIN

科信电子

Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive Applications

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:306.26 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:705.67 Kbytes Page:6 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

文件:289.33 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:705.67 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator, DC−DC Converter and Motor Drive

文件:418.45 Kbytes Page:6 Pages

TOSHIBA

东芝

Power MOSFETs

RENESAS

瑞萨

N-Channel 30-V (D-S) MOSFET

文件:959.93 Kbytes Page:8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:398.15 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:378.9 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件:756.17 Kbytes Page:5 Pages

DOINGTER

杜因特

isc N-Channel MOSFET Transistor

文件:296.76 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:296.95 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:296.87 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 60-V (D-S) MOSFET

文件:949.59 Kbytes Page:7 Pages

VBSEMI

微碧半导体

2SK273产品属性

  • 类型

    描述

  • 型号

    2SK273

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box

  • 制造商

    Renesas

  • 功能描述

    Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box

更新时间:2025-12-25 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ROHM
NEW
TO-220F
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
HITACHI/日立
24+
TO 220
158333
明嘉莱只做原装正品现货
原装
25+
TO-220F
20300
原装特价2SK2738即刻询购立享优惠#长期有货
RENESAS
2016+
TO220
9000
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA
25+
SOT-223
18000
原厂直接发货进口原装
TOSHIBA/东芝
23+
TO-220
54955
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
2000
Renesas
17+
TO-220FM
6200
Sanyo
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔

2SK273数据表相关新闻

  • 2SK303L-SOT113SR-V4-TG_UTC代理商

    2SK303L-SOT113SR-V4-TG_UTC代理商

    2023-2-27
  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package

    2021-6-24
  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P

    2021-6-24
  • 2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

    2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: , Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:

    2021-6-24
  • 2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

    2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio

    2021-6-24
  • 2SK2698

    2SK2698,全新原装当天发货或门市自取0755-82732291.

    2019-11-14