位置:首页 > IC中文资料第1242页 > 2SK273
2SK273价格
参考价格:¥0.3250
型号:2SK2731 品牌:ROHM 备注:这里有2SK273多少钱,2025年最近7天走势,今日出价,今日竞价,2SK273批发/采购报价,2SK273行情走势销售排行榜,2SK273报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings | RENESAS 瑞萨 | |||
Interface and switching (30V, 200mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET | ROHM 罗姆 | |||
Interface and switching (30V, 200mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET | ROHM 罗姆 | |||
Silicon N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON) | KEXIN 科信电子 | |||
N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON) | KEXIN 科信电子 | |||
Interface and switching (30V, 200mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET | ROHM 罗姆 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N-Channel MOSFET Features ● Low on-resistance ● RDS = 20 mΩ typ. ● High speed switching ● 4V gate drive device can be driven from 5V source | KEXIN 科信电子 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | |||
Silicon N Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 15 mΩ typ • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 15 mΩ typ • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor 文件:303.26 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Interface and switching (30V, 200mA) | ROHM 罗姆 | |||
N-Channel MOSFET 文件:1.04724 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
N-Channel MOSFET 文件:1.09923 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
N-Channel MOSFET 文件:1.10758 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive Applications | TOSHIBA 东芝 | |||
isc N-Channel MOSFET Transistor 文件:306.26 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications 文件:705.67 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) 文件:289.33 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications 文件:705.67 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Chopper Regulator, DC−DC Converter and Motor Drive 文件:418.45 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Power MOSFETs | RENESAS 瑞萨 | |||
N-Channel 30-V (D-S) MOSFET 文件:959.93 Kbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
isc N-Channel MOSFET Transistor 文件:398.15 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:378.9 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-Channel MOSFET uses advanced trench technology 文件:756.17 Kbytes Page:5 Pages | DOINGTER 杜因特 | |||
isc N-Channel MOSFET Transistor 文件:296.76 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:296.95 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:296.87 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-Channel 60-V (D-S) MOSFET 文件:949.59 Kbytes Page:7 Pages | VBSEMI 微碧半导体 |
2SK273产品属性
- 类型
描述
- 型号
2SK273
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box
- 制造商
Renesas
- 功能描述
Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
ROHM |
NEW |
TO-220F |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
HITACHI/日立 |
24+ |
TO 220 |
158333 |
明嘉莱只做原装正品现货 |
|||
原装 |
25+ |
TO-220F |
20300 |
原装特价2SK2738即刻询购立享优惠#长期有货 |
|||
RENESAS |
2016+ |
TO220 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TOSHIBA |
25+ |
SOT-223 |
18000 |
原厂直接发货进口原装 |
|||
TOSHIBA/东芝 |
23+ |
TO-220 |
54955 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
2000 |
||||||
Renesas |
17+ |
TO-220FM |
6200 |
||||
Sanyo |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
2SK273芯片相关品牌
2SK273规格书下载地址
2SK273参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SK2911
- 2SK2910-TB-E
- 2SK2910
- 2SK2909
- 2SK2887TL
- 2SK2858
- 2SK2857
- 2SK2854(TE12L,F)
- 2SK2825
- 2SK2823
- 2SK2819
- 2SK2802ZV
- 2SK2795
- 2SK2788VYTR
- 2SK2782
- 2SK2759
- 2SK2755
- 2SK2753
- 2SK2752
- 2SK275100L
- 2SK2751
- 2SK2750
- 2SK2749
- 2SK2746
- 2SK2745
- 2SK2744
- 2SK2742
- 2SK2741
- 2SK2740
- 2SK2738
- 2SK2737
- 2SK2736
- 2SK2735
- 2SK2734
- 2SK2733
- 2SK2731T146
- 2SK2731
- 2SK2730
- 2SK2729
- 2SK2728
- 2SK2727
- 2SK2726
- 2SK2725
- 2SK2724
- 2SK2723
- 2SK2719
- 2SK2718
- 2SK2717
- 2SK2715
- 2SK2713
- 2SK2710
- 2SK2709
- 2SK2708
- 2SK2707
- 2SK2706
- 2SK2705
- 2SK2704
- 2SK2703
- 2SK2615(TE12L,F)
- 2SK2596
- 2SK2593GQL
- 2SK2570ZL
- 2SK2569ZN
- 2SK2556
- 2SK2552B
- 2SK2552
- 2SK2549
- 2SK2503TL
- 2SK2493
- 2SK2491
- 2SK2463T100
- 2SK2463
- 2SK2440
- 2SK2437
- 2SK2434
- 2SK242
- 2SK2415-Z-E2
- 2SK2414-Z
2SK273数据表相关新闻
2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: , Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
2021-6-242SK2698
2SK2698,全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107