位置：首页 > IC中文资料第639页 > 2SK2735
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK2735 | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SK2735 | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | |
2SK2735 | Silicon N Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | |
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET Features ● Low on-resistance ● RDS = 20 mΩ typ. ● High speed switching ● 4V gate drive device can be driven from 5V source | KEXIN 科信电子 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 20 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：398.15 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 30-V (D-S) MOSFET 文件：959.93 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Transistors>Switching/MOSFETs | RENESAS 瑞萨 | | ||
N-Channel MOSFET uses advanced trench technology 文件：756.17 Kbytes Page：5 Pages | DOINGTER 杜因特 | | ||
isc N-Channel MOSFET Transistor 文件：378.9 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | |
2SK2735产品属性
- 类型
描述
- 型号
2SK2735
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
RENESAS/瑞萨 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS/瑞萨 |
25+ |
TO-252 |
45000 |
RENESAS/瑞萨全新现货2SK2735即刻询购立享优惠#长期有排单订 |
|||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS/瑞萨 |
2450+ |
SOT252 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
RENESAS |
2023+ |
null |
4830 |
专注配单,只做原装进口现货 |
|||
RENESAS |
1922+ |
SOT252 |
3000 |
绝对进口原装现货 |
|||
锐俊 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
24+ |
2000 |
||||||
R |
24+ |
TO-252 |
5000 |
全现原装公司现货 |
2SK2735规格书下载地址
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2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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