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2SK27价格

参考价格：￥0.3250

型号：2SK2731 品牌：ROHM 备注：这里有2SK27多少钱，2025年最近7天走势，今日出价，今日竞价，2SK27批发/采购报价，2SK27行情走势销售排行榜，2SK27报价。

型号	功能描述	生产厂家企业	LOGO
2SK270	SILICON MONOLITHIC N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES . 1 Chip Dual Type. . Recommended for First Differential Stages of DC Amplifiers. . Very High I Yf s 1 : iYf s l=20mS(Typ.) (VDS=10V, Vgs=0, f=lkHz, I DS S=3mA) . Good Pair Characteristics : lVGSl-VGS2l=30mV(Max.)(VDS=10V, l	TOSHIBA 东芝	TOSHIBA
2SK2701	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2702	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2702	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2703	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2703	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2704	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2704	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 13A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.57Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2705	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2705	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 13A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.57Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2706	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2706	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 18A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2707	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2707	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4.5A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =1.85Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2708	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2708	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =1.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2709	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 8.5A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.85Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2709	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2710	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2710	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.55Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2711	Switching (250V, 16A) Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel.	ROHM 罗姆	ROHM
2SK2713	Switching (450V, 5A) Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel.	ROHM 罗姆	ROHM
2SK2715	Switching (500V, 2A) Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel.	ROHM 罗姆	ROHM
2SK2715	Silicon N-Channel MOSFET Features ● Low on-resistance. ● Fast switching speed. ● Wide SOA (safe operating area). ● Easily designed drive circuits. ● Easy to parallel.	KEXIN 科信电子	KEXIN
2SK2715	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2718	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS=900V(Min) · Static Drain-Source On-Resistance -RDS(on) =6.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2719	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2719	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 2.6 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1	TOSHIBA 东芝	TOSHIBA
2SK2723	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	NEC 瑞萨	NEC
2SK2723	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS=60V(Min) · Static Drain-Source On-Resistance -RDS(on) =40mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2723	MOS Field Effect Power Transistors SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. FEATURES · Low On-Resistance RDS (on) 1 = 40mW Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mW Max. (VGS = 4 V, ID = 13 A	RENESAS 瑞萨	RENESAS
2SK2724	MOS FIELD EFFECT POWER TRANSISTORS SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1 = 27 mW Max. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mW Max. (VGS = 4 V, ID = 18 A)	RENESAS 瑞萨	RENESAS
2SK2724	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2724	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.	NEC 瑞萨	NEC
2SK2725	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2725	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2725-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2726	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2726	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2726-E	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2727	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2727	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2727-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2728	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2728	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2728-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2729	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2729	Silicon N Channel MOS FET High Speed Power Switching Features 1. Low on-resistance 2. High speed switching 3. Low drive current 4. Avalanche ratings	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2729-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2730	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2730	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2730-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings	RENESAS 瑞萨	RENESAS
2SK2731	Interface and switching (30V, 200mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET	ROHM 罗姆	ROHM
2SK2731	Interface and switching (30V, 200mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET	ROHM 罗姆	ROHM
2SK2731	Silicon N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON)	KEXIN 科信电子	KEXIN
2SK2731-3	N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON)	KEXIN 科信电子	KEXIN
2SK2731T146	Interface and switching (30V, 200mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET	ROHM 罗姆	ROHM
2SK2733	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2734	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2734	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A	RENESAS 瑞萨	RENESAS

2SK27产品属性

类型
描述
型号
2SK27
功能描述
MOSFET N-ch 900V 3A 3.7 ohm
RoHS
否
制造商
STMicroelectronics
晶体管极性
N-Channel
汲极/源极击穿电压
650 V
闸/源击穿电压
25 V
漏极连续电流
130 A 电阻汲极/源极
RDS（导通）
0.014 Ohms
配置
Single
安装风格
Through Hole
封装/箱体
Max247
封装
Tube

2SK27供应商更多...

更新时间：2025-12-26 19:04:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	2SK2724	RENESAS/瑞萨	25+	TO-220	20300	RENESAS/瑞萨原装特价2SK2724即刻询购立享优惠#长期有货	询价
深圳市昌和盛利电子有限公司	2SK2724	NEC	NEW	TO-220F	35890	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市一线半导体有限公司	2SK2724		24+		30000		询价
深圳市恒创达实业有限公司	2SK2726	HIT	17+	TO-220F	6200		询价
洪芯国际半导体（深圳）有限公司	2SK2724	NEC	25+	VQFN-24	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市宇创芯科技有限公司	2SK2724	NEC	24+	TO-220F	9600	原装现货,优势供应,支持实单!	询价
艾睿（深圳）半导体有限公司	2SK2726	HITACHI/日立	2447	TO-220F	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	2SK2724低压MOS管	VBSEMI/台湾微碧	23+	TO-220FM	50000	全新原装正品现货,支持订货	询价
深圳市豪迈兴电子有限公司	2SK2724	NEC	24+		8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市河锋鑫科技有限公司	2SK2724	NEC	22+	TO-220	6000	十年配单,只做原装	询价

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2019-11-14

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2SK27价格

2SK27产品属性

2SK27供应商更多...

2SK27芯片相关品牌

2SK27规格书下载地址

2SK27参数引脚图相关

2SK27数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK2698

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