isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOSFET

Features ● Low on-resistance. ● Fast switching speed. ● Wide SOA (safe operating area). ● Easily designed drive circuits. ● Easy to parallel.

丝印代码：TL；Switching (500V, 2A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel.

10V Drive Nch MOS FET

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isc N-Channel MOSFET Transistor

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Power MOSFET

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Transistors > MOS FET > Power MOS FET

10V Drive Nch MOS FET

文件：79.88 Kbytes Page：5 Pages