2SK2512中文资料下载瑞萨批发供应采购NEC-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第5891页 > 2SK25

2SK25价格

参考价格：￥1.0400

型号：2SK2503TL 品牌：ROHM 备注：这里有2SK25多少钱，2025年最近7天走势，今日出价，今日竞价，2SK25批发/采购报价，2SK25行情走势销售排行榜，2SK25报价。

型号	功能描述	生产厂家企业	LOGO
2SK2503	Silicon N-Channel MOSFET Features ● Low on-resistance. ● Fast switching speed. ● Wide SOA (safe operating area). ● Easily designed drive circuits. ● Easy to parallel.	KEXIN 科信电子	KEXIN
2SK2503	Small switching (60V, 5A) Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching	ROHM 罗姆	ROHM
2SK2503	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.135Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2504	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.22Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2504	4V Drive Nch MOS FET Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching	ROHM 罗姆	ROHM
2SK2504	Silicon N-Channel MOSFET Features ● Low on-resistance. ● Fast switching speed. ● Wide SOA (safe operating area). ● Easily designed drive circuits. ● Easy to parallel.	KEXIN 科信电子	KEXIN
2SK2504	Small switching (100V, 5A) Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching	ROHM 罗姆	ROHM
2SK2504TL	4V Drive Nch MOS FET Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching	ROHM 罗姆	ROHM
2SK2507	Chopper Regulator, DC?묭C Converter and Motor Drive Applications Chopper Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 0.034 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 16 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) ● Enhancement mode : Vth = 0.8 to 2.0	TOSHIBA 东芝	TOSHIBA
2SK2507	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2507	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 0.034 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 16 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) ● Enhancement mode : Vth = 0.8 to 2.0	TOSHIBA 东芝	TOSHIBA
2SK2507F	Chopper Regulator, DC?묭C Converter and Motor Drive Applications Chopper Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 0.034 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 16 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) ● Enhancement mode : Vth = 0.8 to 2.0	TOSHIBA 东芝	TOSHIBA
2SK2508	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2510	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2510	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2510 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-Resistance RDS (on)1 = 20 mW (VGS = 10 V, ID = 20 A) RDS (on)2 = 30 mW (VGS = 4 V, ID = 20 A) •	RENESAS 瑞萨	RENESAS
2SK2510	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID=40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2511	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID=40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2511	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2511 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super Low on-state resistance RDS (on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS (on)2 = 40 mΩ MAX. (VGS = 4 V, ID = 20 A) •	RENESAS 瑞萨	RENESAS
2SK2511	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2512	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2512	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-Resistance RDS (on)1 = 15 mW (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mW (VGS = 4 V, ID = 23 A) • Low Ci	RENESAS 瑞萨	RENESAS
2SK2512	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID=45A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2513	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID=45A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2513-Z	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID=45A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2514	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2514	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2514 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super Low on-state resistance RDS (on)1 ≤ 15 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS (on)2 ≤ 23 mΩ MAX. (VGS = 4 V, ID = 25 A) •	RENESAS 瑞萨	RENESAS
2SK2514	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2515	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK2515	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2515 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super Low on-state resistance RDS (on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS (on)2 = 14 mΩ MAX. (VGS = 4 V, ID = 25 A) •	RENESAS 瑞萨	RENESAS
2SK2515	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2516-01L	N-channel MOS-FET > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters	Fuji 富士通	Fuji
2SK2516-01S	N-channel MOS-FET > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters	Fuji 富士通	Fuji
2SK2517-01L	N-channel MOS-FET > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters	Fuji 富士通	Fuji
2SK2517-01S	N-channel MOS-FET > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters	Fuji 富士通	Fuji
2SK2517L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2517S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2518	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2518-01MR	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2519	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2519-01	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2520	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2520-01MR	N-channel MOS-FET N-channel MOS-FET FAP-II Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters	Fuji 富士通	Fuji
2SK2521	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 18A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2521-01	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2522	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 18A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2522-01MR	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2523	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2523-01	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2524	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2524-01MR	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2525	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2525-01	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2526	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2526-01	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2527	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2527-01MR	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2528	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2528-01	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2529	Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2529	Silicon N Channel MOS FET Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS

2SK25产品属性

类型
描述
型号
2SK25
功能描述
TRANSISTOR | JFET | N-CHANNEL | 18V V(BR)DSS | 600NA I(DSS)

2SK25供应商更多...

更新时间：2025-11-24 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SK2512	TOSHIBA/东芝	24+	NA/	11318	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市威雅利发展有限公司	2SK2512	NEC	06+	TO220	110	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市昌和盛利电子有限公司	2SK2512	NEC	NEW	TO-220F	35890	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市一线半导体有限公司	2SK2512	NEC	24+	TO-220F	8866		询价
深圳市安富世纪电子有限公司	2SK2513	NEC	23+	TO-262	6000	专注配单,只做原装进口现货	询价
深圳市高捷芯城科技有限公司	2SK2512-AZ	RENESAS(瑞萨)/IDT	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
贸泽芯城（深圳）电子科技有限公司	2SK2513	NEC	23+	TO-263	12000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
天津市博通航睿技术有限公司	2SK2513-Z-E1	NEC	23+	SOT263	7000		询价
深圳市宏捷佳电子科技有限公司	2SK2512	N	25+	TOTO-220	37650	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市豪迈兴电子有限公司	2SK2512	NEC	24+		8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价

2SK25芯片相关品牌

2SK25规格书下载地址

2SK25参数引脚图相关

2SK25数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-27
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-24
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
2021-6-24
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
2021-6-24
2SK2698
2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
2SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

2SK25价格

2SK25产品属性

2SK25供应商更多...

2SK25芯片相关品牌

2SK25规格书下载地址

2SK25参数引脚图相关

2SK25数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK2698

2SK1985-01MR

DdatasheetPDF页码索引