找IC，尽在114IC

芯片资料
  • 芯片资料
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 制造商
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料 > 2SK25

2SK25价格

参考价格：￥1.0400

型号：2SK2503TL 品牌：ROHM 备注：这里有2SK25多少钱，2026年最近7天走势，今日出价，今日竞价，2SK25批发/采购报价，2SK25行情走势销售排行榜，2SK25报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK2503

丝印代码：K2503；Small switching (60V, 5A)

Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

ROHM

罗姆

2SK2503

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.135Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2503

Silicon N-Channel MOSFET

Features ● Low on-resistance. ● Fast switching speed. ● Wide SOA (safe operating area). ● Easily designed drive circuits. ● Easy to parallel.

KEXIN

科信电子

2SK2504

Silicon N-Channel MOSFET

Features ● Low on-resistance. ● Fast switching speed. ● Wide SOA (safe operating area). ● Easily designed drive circuits. ● Easy to parallel.

KEXIN

科信电子

2SK2504

4V Drive Nch MOSFET

•4V驱动型 Nch 功率MOSFET;

ROHM

罗姆

2SK2504

丝印代码：K2504；4V Drive Nch MOS FET

Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

ROHM

罗姆

2SK2504

丝印代码：K2504；Small switching (100V, 5A)

Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

ROHM

罗姆

2SK2504

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.22Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2504TL

4V Drive Nch MOS FET

Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

ROHM

罗姆

2SK2507

Power MOSFET (N-ch single 30V VDSS 60V)

Polarity：N-ch\nGeneration：L²-π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available Drain current ID 25 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 50 V ;

TOSHIBA

东芝

2SK2507

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 0.034 Ω (typ.) ● High forward transfer admittance : |Yfs| = 16 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) ● Enhancement mode : Vth = 0.8 to 2.0

TOSHIBA

东芝

2SK2507

Chopper Regulator, DC?묭C Converter and Motor Drive Applications

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 0.034 Ω (typ.) ● High forward transfer admittance : |Yfs| = 16 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) ● Enhancement mode : Vth = 0.8 to 2.0

TOSHIBA

东芝

2SK2507

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK2507F

Chopper Regulator, DC?묭C Converter and Motor Drive Applications

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 0.034 Ω (typ.) ● High forward transfer admittance : |Yfs| = 16 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) ● Enhancement mode : Vth = 0.8 to 2.0

TOSHIBA

东芝

2SK2508

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK2508

Power MOSFET (N-ch 150V VDSS 250V)

Polarity：N-ch\nGeneration：π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 13 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 250 V ;

TOSHIBA

东芝

2SK2510

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2510

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2510 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-Resistance RDS (on)1 = 20 mW (VGS = 10 V, ID = 20 A) RDS (on)2 = 30 mW (VGS = 4 V, ID = 20 A) •

RENESAS

瑞萨

2SK2510

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

2SK2511

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

2SK2511

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2511

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2511 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super Low on-state resistance RDS (on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS (on)2 = 40 mΩ MAX. (VGS = 4 V, ID = 20 A) •

RENESAS

瑞萨

2SK2512

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=45A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2512

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

2SK2512

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-Resistance RDS (on)1 = 15 mW (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mW (VGS = 4 V, ID = 23 A) • Low Ci

RENESAS

瑞萨

2SK2513

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=45A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2513-Z

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=45A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2514

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2514

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2514 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super Low on-state resistance RDS (on)1 ≤ 15 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS (on)2 ≤ 23 mΩ MAX. (VGS = 4 V, ID = 25 A) •

RENESAS

瑞萨

2SK2514

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

2SK2515

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

2SK2515

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2515 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Super Low on-state resistance RDS (on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS (on)2 = 14 mΩ MAX. (VGS = 4 V, ID = 25 A) •

RENESAS

瑞萨

2SK2515

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2516-01L

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

FUJI

富士通

2SK2516-01S

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

FUJI

富士通

2SK2517-01L

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

FUJI

富士通

2SK2517-01S

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

FUJI

富士通

2SK2517L

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2517S

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2518

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2518-01MR

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

FUJI

富士通

2SK2519

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2519-01

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

FUJI

富士通

2SK2520

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2520-01MR

N-channel MOS-FET

N-channel MOS-FET FAP-II Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters

FUJI

富士通

2SK2521

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 18A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2521-01

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

FUJI

富士通

2SK2522

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 18A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2522-01MR

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

FUJI

富士通

2SK2523

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2523-01

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

FUJI

富士通

2SK2524

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2524-01MR

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

FUJI

富士通

2SK2525

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2525-01

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

FUJI

富士通

2SK2526

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2526-01

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

FUJI

富士通

2SK2527

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2527-01MR

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

FUJI

富士通

2SK2528

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK25产品属性

  • 类型

    描述

  • Status：

    新设计非推荐

  • 封装：

    CPT3

  • 包装数量：

    2500

  • 最小独立包装数量：

    2500

  • 包装形态：

    Taping

  • RoHS：

    Yes

  • Grade：

    Standard

  • Package Code：

    TO-252 (DPAK)

  • JEITA Package：

    SC-63

  • Package Size[mm]：

    6.5x9.5 (t=2.3)

  • Number of terminal：

    3

  • Polarity：

    Nch

  • Drain-Source Voltage VDSS[V]：

    100

  • Drain Current ID[A]：

    5.0

  • RDS(on)[Ω] VGS=4V(Typ.)：

    0.25

  • RDS(on)[Ω] VGS=10V(Typ.)：

    0.18

  • RDS(on)[Ω] VGS=Drive (Typ.)：

    0.25

  • Power Dissipation (PD)[W]：

    20.0

  • Mounting Style：

    Surface mount

  • Storage Temperature (Min.)[°C]：

    -55

  • Storage Temperature (Max.)[°C]：

    150

2SK25供应商更多...

更新时间：2026-8-2 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市一线半导体有限公司
2SK2512
NEC
24+
TO-220F
8866
询价
深圳市威雅利发展有限公司
2SK2512
NEC
06+
TO220
110
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市豪迈兴电子有限公司
2SK2512
NEC
2602+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市河锋鑫科技有限公司
2SK2512
NEC
22+
TO-220
6000
十年配单,只做原装
询价
深圳深宇韬电子科技有限公司
2SK2512
NEC
2023+
TO220
8800
正品渠道现货 终端可提供BOM表配单。
询价
深圳市昌和盛利电子有限公司
2SK2512
NEC
26+
TO-220F
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市威尔健半导体有限公司
2SK2512
TOSHIBA/东芝
23+
TO220F
50000
全新原装正品现货,支持订货
询价
上海金庆电子技术有限公司
2SK2512
TOSHIBA
14+
TO220F
11374
全新 发货1-2天
询价
深圳市博中泰实业有限公司
2SK2512
TOSHIBA/东芝
25+
TO220F
90000
全新原装现货
询价
深圳市斯普仑科技有限公司
2SK2512
TOSHIBA/东芝
25+
N/A
20000
只做原装,只有原装。
询价

2SK25芯片相关品牌

2SK25规格书下载地址

2SK25参数引脚图相关

2SK25数据表相关新闻

  • 2SK303L-SOT113SR-V4-TG_UTC代理商

    2SK303L-SOT113SR-V4-TG_UTC代理商

    2023-2-27

  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P

    2021-6-24

  • 2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

    2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:

    2021-6-24

  • 2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

    2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio

    2021-6-24

  • 2SK2698

    2SK2698，全新原装当天发货或门市自取0755-82732291.

    2019-11-14

  • 2SK1985-01MR

    2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.

    2019-10-30

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2026 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示