SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2512 is N-Channel MOS Field Effect Transistor designed

for high current switching applications.

FEATURES

• Low On-Resistance

RDS (on)1 = 15 mW (VGS = 10 V, ID = 23 A)

RDS (on)2 = 23 mW (VGS = 4 V, ID = 23 A)

• Low Ciss Ciss = 2 100 pF TYP.

• Built-in G-S Protection Diode