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位置：首页 > IC中文资料第12744页 > 2SK21

2SK21价格

参考价格：￥0.5850

型号：2SK2103 品牌：ROHM 备注：这里有2SK21多少钱，2024年最近7天走势，今日出价，今日竞价，2SK21批发/采购报价，2SK21行情走势销售排行榜，2SK21报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SK210

NCHANNELJUNCTIONTYPE(FMTUNER,VHFBANDAMPLIFIERAPPLICATIONS)

FMTunerApplications VHFBandAmplifierApplications •Highpowergain:GPS=24dB(typ.)(f=100MHz) •Lownoisefigure:NF=1.8dB(typ.)(f=100MHz) •Highforwardtransferadmittance:|Yfs|=7mS(typ.)(f=1kHz)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK210

TOSHIBAFieldEffectTransistorSiliconNChannelJunctionType

FMTunerApplications VHFBandAmplifierApplications •Highpowergain:GPS=24dB(typ.)(f=100MHz) •Lownoisefigure:NF=1.8dB(typ.)(f=100MHz) •Highforwardtransferadmittance:|Yfs|=7mS(typ.)(f=1kHz)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK210

FMTunerApplicationsVHFBandAmplifierApplications

FMTunerApplications VHFBandAmplifierApplications •Highpowergain:GPS=24dB(typ.)(f=100MHz) •Lownoisefigure:NF=1.8dB(typ.)(f=100MHz) •Highforwardtransferadmittance:|Yfs|=7mS(typ.)(f=1kHz)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK210

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK210

FMTunerApplicationsVHFBandAmplifierApplications

FMTunerApplications VHFBandAmplifierApplications •Highpowergain:GPS=24dB(typ.)(f=100MHz) •Lownoisefigure:NF=1.8dB(typ.)(f=100MHz) •Highforwardtransferadmittance:|Yfs|=7mS(typ.)(f=1kHz)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2100-01MR

PowerMOSFET

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2101-01MR

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2101-01MR

N-channelMOS-FETHighSpeedSwitching

-HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -AvalancheProof >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2103

Smallswitching(30V,2A)

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive(4V). 5)Easilydesigneddrivecircuits. 6)Easytouseinparallel.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SK2103T100

Smallswitching(30V,2A)

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive(4V). 5)Easilydesigneddrivecircuits. 6)Easytouseinparallel.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
2SK2108

FastSwitchingSpeed

DESCRIPTION •DrainCurrent–ID=6A@TC=25℃ •DrainSourceVoltage-:VDSS=250V(Min) •FastSwitchingSpeed APPLICATIONS •Switchingregulators

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SK2108

VeryHigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •Low-voltagedrive. •Micalesspackagefacilitatingmounting.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK2109

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)=1.0ΩMAX.@VGS=4.0V,ID=0.3A ●Highswitchingspeed

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SK2109

N-CHANNELMOSFETFORHIGH-SPEEDSWITCHING

N-CHANNELMOSFETFORHIGH-SPEEDSWITCHING The2SK2109isaN-channelMOSFETofaverticaltypeandisaswitchingelementthatcanbedirectlydrivenbytheoutputofanICoperatingat5V. ThisproducthasalowONresistanceandsuperbswitchingcharacteristicsandisidealfordrivingthe

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2109

MOSFIELDEFFECTTRANSISTOR

N-CHANNELMOSFET FORHIGH-SPEEDSWITCHING The2SK2109isaN-channelMOSFETofaverticaltypeand isaswitchingelementthatcanbedirectlydrivenbytheoutputof anICoperatingat5V. ThisproducthasalowONresistanceandsuperbswitching characteristicsandisidealfordrivin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK210-BL

FMTunerApplicationsVHFBandAmplifierApplications

FMTunerApplications VHFBandAmplifierApplications •Highpowergain:GPS=24dB(typ.)(f=100MHz) •Lownoisefigure:NF=1.8dB(typ.)(f=100MHz) •Highforwardtransferadmittance:|Yfs|=7mS(typ.)(f=1kHz)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK210-GR

FMTunerApplicationsVHFBandAmplifierApplications

FMTunerApplications VHFBandAmplifierApplications •Highpowergain:GPS=24dB(typ.)(f=100MHz) •Lownoisefigure:NF=1.8dB(typ.)(f=100MHz) •Highforwardtransferadmittance:|Yfs|=7mS(typ.)(f=1kHz)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK210-Y

TOSHIBAFieldEffectTransistorSiliconNChannelJunctionType

FMTunerApplications VHFBandAmplifierApplications •Highpowergain:GPS=24dB(typ.)(f=100MHz) •Lownoisefigure:NF=1.8dB(typ.)(f=100MHz) •Highforwardtransferadmittance:|Yfs|=7mS(typ.)(f=1kHz)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK211

NCHANNELJUNCTIONTYPE(FMTUNER,VHFBANDAMPLIFIERAPPLICATIONS)

FMTunerApplications VHFBandAmplifierApplications •Lownoisefigure:NF=2.5dB(typ.)(f=100MHz) •Highforwardtransferadmitance:|Yfs|=9mS(typ.) •Extremelylowreversetransfercapacitance:Crss=0.1pF(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2110

MOSFieldEffectTransistor

Features ●Lowon-resistanceRDS(on)=1.5ΩMAX.@VGS=4.0V,ID=0.3A ●Highswitchingspeed

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SK2110

N-CHANNELMOSFETFORHIGH-SPEEDSWITCHING

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2110

MOSFIELDEFFECTTRANSISTOR

N-CHANNELMOSFET FORHIGH-SPEEDSWITCHING DESCRIPTION The2SK2110isaN-channelMOSFETofaverticaltype andisaswitchingelementthatcanbedirectlydrivenbythe outputofanICoperatingat5V. Thisproducthasalowon-stateresistanceandsuperb switchingcharacteristicsandis

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2111

MOSFIELDEFFECTTRANSISTOR

N-CHANNELMOSFET FORHIGH-SPEEDSWITCHING The2SK2111isaN-channelMOSFETofaverticaltypeand isaswitchingelementthatcanbedirectlydrivenbytheoutputof anICoperatingat5V. ThisproducthasalowONresistanceandsuperbswitching characteristicsandisidealfordrivin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2111

N-CHANNELMOSFETFORHIGH-SPEEDSWITCHING

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2111

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)=0.6MAX.@VGS=4.0V,ID=0.5A ●Highswitchingspeed

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SK2112

MOSFieldEffectTransistor

Features ●Lowon-resistanceRDS(on)=1.2MAX.@VGS=4.0V,ID=0.5A ●Highswitchingspeed

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SK2112

N-CHANNELMOSFETFORHIGH-SPEEDSWITCHING

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2112

MOSFIELDEFFECTTRANSISTOR

N-CHANNELMOSFET FORHIGH-SPEEDSWITCHING The2SK2112isaN-channelMOSFETofaverticaltypeand isaswitchingelementthatcanbedirectlydrivenbytheoutputof anICoperatingat5V. ThisproducthasalowONresistanceandsuperbswitching characteristicsandisidealfordrivin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2114

SiliconNChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforSwitchingregulator Application Highspeedpowerswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2116

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforSwitchingregulator Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK2117

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforSwitchingregulator Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK2117

FastSwitchingSpeed

DESCRIPTION •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage-:VDSS=500V(Min) •FastSwitchingSpeed APPLICATIONS •Switchingregulators

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SK2118

SiliconN-ChannelMOSFET

Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •SuitableforSwitchingregulator,DC-DCconverter,MotorControl Application Highspeedpowerswitching

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK2118

SiliconNChannelMOSFET

Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter,motorcontrol

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2118

FastSwitchingSpeed

DESCRIPTION •DrainCurrent–ID=5A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •FastSwitchingSpeed APPLICATIONS •Switchingregulators,DC-DCconverter,MotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SK212

N-ChannelJunctionSiliconFET(FMTunerApplications)

FMTunerApplications Features ·IdealforFMtunersinlow-voltageradios,carradios,etc. ·Small-sizedpackagepermitting2SK212-appliedsetstobemadesmallandslim. ·SmallCrss(Crss=0.04pFtyp). ·Highyfs(yfs=6.0mStyp).

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SK2123

SiliconN-ChannelPowerF-MOSFET

■Features ●Avalancheenergycapacityguaranteed:EAS>100mJ ●VGSS=±30Vguaranteed ●High-speedswitching:tf=35ns ●Nosecondarybreakdown ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor ●Controlequipment ●Switchingpow

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SK2124

SiliconN-ChannelPowerF-MOSFET

■Features ●Avalancheenergycapacityguaranteed:EAS>130mJ ●VGSS=±30Vguaranteed ●High-speedswitching:tf=60ns ●Nosecondarybreakdown ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor ●Controlequipment ●

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SK2125

SiliconN-ChannelPowerF-MOSFET

■Features ●Avalancheenergycapacityguaranteed:EAS>15.6mJ ●VGSS=±30Vguaranteed ●High-speedswitching:tf=35ns ●Nosecondarybreakdown ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor ●Controlequipment ●

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SK2126

SiliconN-ChannelPowerF-MOSFET

■Features ●Avalancheenergycapacityguaranteed:EAS>100mJ ●VGSS=±30Vguaranteed ●High-speedswitching:tf=40ns ●Nosecondarybreakdown

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SK2128

SiliconN-ChannelPowerF-MOSFET

Features 1.Avalancheenergycapacityguaranteed:EAS>15mJ 2.VGSS=±20Vguaranteed 3.High-speedswitching:tf=35ns 4.Nosecondarybreakdown Applications 1.Contactlessrelay 2.Divingcircuitforasolenoid 3.Drivingcircuitforamotor 4.Controlequipment

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SK2129

SiliconN-ChannelPowerF-MOSFET

■Features ●Avalancheenergycapacityguaranteed:EAS>20mJ ●VGSS=±30Vguaranteed ●High-speedswitching:tf=50ns ●Nosecondarybreakdown ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor ●Controlequipment ●Switching

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SK213

SiliconN-ChannelMOSFET

Features •Suitablefordirectmounting •Highforwardtransferadmittance •Excellentfrequencyresponse •Enhancement-mode Application Highfrequencyandlowfrequencypoweramplifier,highspeedswitching.Complementarypairwith2SJ76,J77,J78,J79

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK213

SiliconNChannelMOSFET

Features •Suitablefordirectmounting •Highforwardtransferadmittance •Excellentfrequencyresponse •Enhancement-mode Application Highfrequencyandlowfrequencypoweramplifier,highspeedswitching.Complementarypairwith2SJ76,J77,J78,J79

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2130

SiliconN-ChannelPowerF-MOSFET

■Features ●Avalancheenergycapacityguaranteed:EAS>15mJ ●VGSS=±30Vguaranteed ●High-speedswitching:tf=45ns ●Nosecondarybreakdown ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor ●Controlequipment ●S

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SK2131

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE?

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2131

MOSFIELDEFFECTPOWERTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2132

MOSFIELDEFFECTPOWERTRANSISTOR|

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2132

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE?

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2133

MOSFieldEffectPowerTransistor

Features •Lowon-resistance RDS(on)=0.21MAX.@VGS=10V,ID=8.0A •LowCissCiss=1090pFTYP. •Highavalanchecapabil

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SK2133

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2133

MOSFIELDEFFECTPOWERTRANSISTORS

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2133-Z

MOSFIELDEFFECTPOWERTRANSISTORS

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2133-Z

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2134

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2134

MOSFIELDEFFECTPOWERTRANSISTORS

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2134-Z

MOSFIELDEFFECTPOWERTRANSISTORS

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2134-Z

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2135

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK2135isN-channelPowerMOSFieldEffectTransistordesignedforhighvoltageswitchingapplications.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2135

MOSFIELDEFFECTPOWERTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK21产品属性

  • 类型

    描述

  • 型号

    2SK21

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    N CHANNEL JUNCTION TYPE(FM TUNER, VHF BAND AMPLIFIER APPLICATIONS)

2SK21供应商更多...

更新时间：2024-5-29 11:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市航润创能电子集团有限公司
2SK2112
NEC
21+
SOT-89
20571
原装现货假一赔十
询价
深圳市润联芯城科技有限公司
2SK2112
RENESAS/瑞萨
23+
SOT-89
50000
原装正品 支持实单
询价
深圳市中联芯电子有限公司
2SK2112
NEC/RENESAS
24+
SOT-89
9000
只做原装正品 有挂有货 假一赔十
询价
深圳市维尔达电子有限公司
2SK2112
NEC/RENESAS
2205+
SOT-89
22688
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市芯福林电子科技有限公司
2SK2112
NEC
21+
SOT89
13880
公司只售原装,支持实单
询价
深圳市宇创芯科技有限公司
2SK2112
RENESAS/瑞萨
22+
SOT-89
9600
原装现货,优势供应,支持实单!
询价
深圳市豪迈兴电子有限公司
2SK2112
NEC
2339+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳深宇韬电子科技有限公司
2SK2112
NEC/RENESAS
2023+
SOT-89
8800
正品渠道现货 终端可提供BOM表配单。
询价
深圳市汇莱威科技有限公司
2SK2112
RENESAS/瑞萨
SOT89
7906200
询价
艾睿国际（香港）有限公司
2SK2112
NEC
2021+
SOT-89
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价

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  • RENESAS
  • TTELEC
  • XFMRS

2SK21规格书下载地址

2SK21参数引脚图相关

2SK21数据表相关新闻

  • 2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

    2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 ManufacturerPartNumber: 2SK3065 RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: ROHMCOLTD PackageDescription: ， ReachComplianceCode: compliant ECCNCode: EAR99 Manufacturer:

    2021-6-24

  • 2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

    2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK2415-Z-E1-AZ ManufacturerPartNumber: 2SK2415-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP PackageDescriptio

    2021-6-24

  • 2SK1485-T1

    2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.

    2020-9-12

  • 2SK2698

    2SK2698，全新原装当天发货或门市自取0755-82732291.

    2019-11-14

  • 2SK1985

    2SK1985，全新原装当天发货或门市自取0755-82732291.

    2019-10-30

  • 2SK1985-01MR

    2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.

    2019-10-30

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