Silicon N-Channel Power F-MOS FET

■Features ●Avalanche energy capacity guaranteed: EAS > 100mJ ●VGSS= ±30V guaranteed ●High-speed switching: tf= 35ns ●No secondary breakdown ■Applications ●Contactless relay ●Diving circuit for a solenoid ●Driving circuit for a motor ●Control equipment ●Switching pow

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel Power F-MOS FET

■ ●Avalanche energy capacity guaranteed: EAS 100mJ\n●VGSS= ±30V guaranteed\n●High-speed switching: tf= 35ns\n●No secondary breakdown■Applications\n●Contactless relay\n●Diving circuit for a solenoid\n●Driving circuit for a motor\n●Control equipment\n●Switching power supply;

isc N-Channel MOSFET Transistor

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