SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4.0A@ TC=25℃ · Drain Source Voltage -VDSS= 180V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.65Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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MOS Field Effect Power Transistor

MOS Field Effect Power Transistor Features Low on-resistance RDS(on)=0.65 (VGS=10V,ID=2A) Low Ciss Ciss=300pF typ Built-in G-S Gate Protection Diode High Avalanche Capability Ratings

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4.0A@ TC=25℃ · Drain Source Voltage -VDSS= 180V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.65Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1954 is N-channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 0.65 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low Ciss: Ciss = 300 pF TYP. • Built-in G-S Gate Pro

isc N-Channel MOSFET Transistor

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