位置：首页 > IC中文资料第1284页 > 2SK1880
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK1880 | Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SK1880 | Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching | RENESAS 瑞萨 | | |
2SK1880 | N-Channel 650 V (D-S) MOSFET 文件：1.08591 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
2SK1880 | Silicon N Channel MOS FET | RENESAS 瑞萨 | | |
2SK1880 | Silicon N-Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 | | |
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 | | ||
isc N-Channel MOSFET Transistor 文件：318.31 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：310.09 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon N-Channel MOSFET 文件：44.39 Kbytes Page：1 Pages | KEXIN 科信电子 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08598 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
2SK1880产品属性
- 类型
描述
- 型号
2SK1880
- 制造商
Renesas Electronics
- 功能描述
Cut Tape
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
NA/ |
4150 |
原装现货,当天可交货,原型号开票 |
|||
日立 |
24+ |
TO-262/263 |
6430 |
原装现货/欢迎来电咨询 |
|||
VBSEMI/台湾微碧 |
24+ |
TO-252 |
60000 |
||||
HITACHI/日立 |
24+ |
TO251 |
100 |
大批量供应优势库存热卖 |
|||
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
70780 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
FUJI/富士电机 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HITACHI/日立 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
FUJI/富士电机 |
25+ |
TO-220 |
9800 |
全新原装现货,假一赔十 |
|||
HITACHI |
24+ |
TO-252 |
36800 |
2SK1880规格书下载地址
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